We used graphene oxide (GO) and egg albumen (EA) to fabricate bipolar resistance switching devices with indium tin oxide (ITO)/GO/EA/GO/Aluminum (Al) and ITO/EA/Al structures. The experimental results show that these ITO/GO/EA/GO/Al and ITO/EA/Al bio-memristors exhibit rewritable flash memory characteristics. Comparisons of ITO/GO/EA/GO/Al devices with 0.05 ωt %, 0.5 ωt %, and 2 ωt % GO in the GO layers and the ITO/EA/Al device show that the ON/OFF current ratio of these devices increases as the GO concentration decreases. Among these devices, the highest switching current ratio is 1.87 × 103. Moreover, the RESET voltage decreases as the GO concentration decreases, which indicates that GO layers with different GO concentrations can be adopted to adjust the ON/OFF current ratio and the RESET voltage. When the GO concentration is 0.5 ωt %, the device can be switched more than 200 times. The retention times of all the devices are longer than 104 s.
Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells