Polarization Analyzing Image Sensor with On-Chip Metal Wire Grid Polarizer in 65-nm Standard Complementary Metal Oxide Semiconductor Process

2011 ◽  
Vol 50 (4) ◽  
pp. 04DL01 ◽  
Author(s):  
Sanshiro Shishido ◽  
Toshihiko Noda ◽  
Kiyotaka Sasagawa ◽  
Takashi Tokuda ◽  
Jun Ohta
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Metal Wire ◽  
Oxide Semiconductor ◽  
Wire Grid ◽  
On Chip ◽  
Wire Grid Polarizer ◽  
Semiconductor Process

A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor

2008 ◽  
Vol 47 (7) ◽  
pp. 5390-5395 ◽  
Author(s):  
Koichi Mizobuchi ◽  
Satoru Adachi ◽  
Jose Tejada ◽  
Hiromichi Oshikubo ◽  
Nana Akahane ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dark Current ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Wide Dynamic Range

A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction

2017 ◽  
Vol 9 (15) ◽  
pp. 13262-13268 ◽  
Author(s):  
Fabian Ambriz-Vargas ◽  
Gitanjali Kolhatkar ◽  
Maxime Broyer ◽  
Azza Hadj-Youssef ◽  
Rafik Nouar ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ferroelectric Tunnel Junction ◽  
Semiconductor Process
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