Fabrication of Lead-Free (Na$_{0.5}$K$_{0.5}$)NbO$_{3}$–BaZrO$_{3}$–(Bi$_{0.5}$Li$_{0.5}$)TiO$_{3}$ Ferroelectric Thin Films on (111)Pt/Ti/SiO$_{2}$/(100)Si Substrate by Pulsed Laser Deposition

ABSTRACTC axis-oriented Bi4Ti3O12–SrBi4Ti4O15 (B IT-SB Ti) intergrowth epitaxial ferroelectric thin films have been grown by pulsed laser deposition (PLD) method on MgO (001) and SrTiO3 (001) substrates. The epitaxial growth of BIT-SBTi intergrowth thin films were confirmed by X-ray diffraction (XRD) θ-2θ scan, pole figure plots and reciprocal space mappings. The c axis lattice constant of the BIT-SBTi intergrowth thin film is very close to that of made up of regular stacking of one-halves of the unit cells of Bi4Ti3O12 (3.296 nm) and SrBi4Ti4O15 (4.189 nm). The annealed BIT-SBTi thin film on Pt/Ti/SiO2/Si substrate shows intergrowth structure, too, and exhibits superior ferroelectricity that the values of 2Pr and 2Ec are 32.0 μC/cm2 and 190 kV/cm, respectively. The annealed BIT-SBTi film shows that the degradation of switching charge after 1×1010 switching cycles was 16.5%. This ferroelectric enhancement is attributed to strain of pseudo-perovskite layers interacting through Bi2O2 layer. The dielectric constant and dielectric loss of the annealed BIT-SBTi film were 433 and 0.037, respectively.

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SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:20011121 ◽

2001 ◽

Vol 11 (PR11) ◽

pp. Pr11-133-Pr11-137

Author(s):

J. R. Duclère ◽

M. Guilloux-Viry ◽

A. Perrin ◽

A. Dauscher ◽

S. Weber ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition ◽

Platinum Electrodes

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c-axis oriented ferroelectric thin films of Si-substituted PbTiO3 on Si(100) by pulsed laser deposition: Boost for nonvolatile memory application

Applied Physics Letters ◽

10.1063/1.121006 ◽

1998 ◽

Vol 72 (10) ◽

pp. 1179-1181 ◽

Cited By ~ 8

Author(s):

S. C. Purandare ◽

V. R. Palkar ◽

J. John ◽

M. S. Multani ◽

R. Pinto

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Nonvolatile Memory ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition

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Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-243-495 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 2

Author(s):

K. Nashimoto ◽

D. K. Fork ◽

F. A. Ponce ◽

T. H. Geballe

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Buffer Layers ◽

Laser Deposition ◽

Hrtem Observation ◽

Device Applications ◽

Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

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Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-655-cc3.5.1 ◽

2000 ◽

Vol 655 ◽

Cited By ~ 1

Author(s):

Masanori Okuyama ◽

Toshiyuki Nakaiso ◽

Minoru Noda

Keyword(s):

Thin Film ◽

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition ◽

Polarization Reversal ◽

Ambient Gas ◽

Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

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