Effect of Channel Length on the Reliability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors
2012 ◽
Vol 51
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pp. 03CB03
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Keyword(s):
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2015 ◽
Vol 135
(6)
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pp. 192-198
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Keyword(s):
Keyword(s):
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2011 ◽
Vol 50
(3)
◽
pp. 03CB06
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Keyword(s):
Keyword(s):
2009 ◽
Vol 3
(7-8)
◽
pp. 239-241
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