Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors
2021 ◽
Vol 36
(5)
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pp. 649-655
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2012 ◽
Vol 51
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pp. 03CB03
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2015 ◽
Vol 23
(5)
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pp. 187-195
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