Transport Layer Scanning for Attack Surface Detection in Vehicular Networks

2021 ◽

Vol 3 (2) ◽

pp. 90-100

Author(s):

Smys S ◽

Haoxiang Wang

Keyword(s):

Trust Management ◽

Data Exchange ◽

Vehicular Networks ◽

Third Party ◽

Smart Vehicles ◽

Use Of Data ◽

Architectural Framework ◽

Scenarios Simulation ◽

Attack Surface ◽

A Chain

The concept of interconnecting smart vehicles and advancements in automotive automation leads to beneficial outcomes, such as a reduction in road fatalities and congestion. However, including a chain of automation in the attack surface will expand the attack surface and expose the security of automobiles to malicious infiltration. The proposed methodology provides access to specific users while restricting the third party requests. Moreover, it also makes use of data exchange that takes place between the roadside units and vehicle to track the vehicle status without compromising the in-vehicle network. To ensure a valid and authentic communication, vehicles with a proper and verifiable record will only be allowed to exchange messages in the blockchain network. Using qualitative arguments, we have identified that the proposed work is resilient to identified attacks. Similarly, quantitative experimentation indicates that this methodology shows a storage size compatibility and suitable response time in realistic scenarios. Simulation results indicate that, the proposed work shows positive results to secure vehicular networks, vehicular forensics and trust management.

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Controlled Injection of Holes into ALQ3 Based Oleds by Means of An Oxidized Transport Layer

MRS Proceedings ◽

10.1557/proc-708-bb3.27 ◽

2001 ◽

Vol 708 ◽

Author(s):

Mathew K. Mathai ◽

Keith A. Higginson ◽

Bing R. Hsieh ◽

Fotios Papadimitrakopoulos

Keyword(s):

Indium Tin Oxide ◽

Oxidative Degradation ◽

Transport Layer ◽

Hole Injection ◽

Carrier Injection ◽

Salt Loading ◽

Light Emitting ◽

Hole Transporting ◽

Intrinsic Degradation ◽

Variable Conductivity

ABSTRACTIn this paper we report a method for tuning the extent of hole injection into the active light emitting tris- (8-hydroxyquinoline) aluminum (Alq3) layer in organic light emitting diodes (OLEDs). This is made possible by modifying the indium tin oxide (ITO) anode with an oxidized transport layer (OTL) comprising a hole transporting polycarbonate of N,N'-bis(3-hydroxymethyl)-N,N'-bis(phenyl) benzidine and diethylene glycol (PC-TPB-DEG) doped with varying concentrations of antimonium hexafluoride salt of N,N,N',N'-tetra-p-tolyl-4,4'-biphenyldiamine (TMTPD+ SbF6-). The conductivity of the OTL can be changed over three orders of magnitude depending on salt loading. The analysis of hole and electron current variations in these devices indicates that optimizing the conductivity of the OTL enables the modulation of hole injection into the Alq3 layer. The bipolar charge transport properties for OLEDs in which the interfacial carrier injection barriers have been minimized, are governed by the conductivities of the respective layers and in this case it is shown that the variable conductivity of the OTL does allow for better control of the same. Accordingly, varying the concentration of holes in the device indicates that beyond an optimum concentration of holes, further hole injection results in the formation of light quenching cationic species and the initiation of oxidative degradation processes in the Alq3 layer, thus accelerating the intrinsic degradation of these devices. The variable conductivity of the OTL can hence be used to minimize the occurrence of these processes.

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