Current Status and Future Prospects of GaN HEMTs for High Power and High Frequency Applications

2013 ◽  
Vol 50 (3) ◽  
pp. 323-332 ◽  
Author(s):  
T. Kikkawa ◽  
M. Kanamura ◽  
T. Ohki ◽  
K. Imanishi ◽  
K. Watanabe ◽  
...  
Keyword(s):  
High Power ◽  
High Frequency ◽  
Current Status ◽  
Future Prospects ◽  
Gan Hemts

Current status of high-power GaN HEMTs and future prospects on AlN-based devices

2021 ◽  
Author(s):  
Junji Kotani ◽  
Shiro Ozaki ◽  
Junya Yaita ◽  
Atsushi Yamada ◽  
Toshihiro Ohki
Keyword(s):  
High Power ◽  
Current Status ◽  
Future Prospects ◽  
Gan Hemts

scholarly journals Figures of merit in high-frequency and high-power GaN HEMTs

2009 ◽  
Vol 193 ◽  
pp. 012040 ◽  
Author(s):  
F A Marino ◽  
N Faralli ◽  
D K Ferry ◽  
S M Goodnick ◽  
M Saraniti
Keyword(s):  
High Power ◽  
High Frequency ◽  
Figures Of Merit ◽  
Gan Hemts

scholarly journals Reliability Concerns due to Self-Heating effects in GaN HEMTs

2013 ◽  
Vol 8 (2) ◽  
pp. 78-82
Author(s):  
B. Padmanabhan ◽  
D. Vasileska ◽  
S. M. Goodnick
Keyword(s):  
High Power ◽  
High Frequency ◽  
Additional Problem ◽  
Bias Stress ◽  
Self Heating ◽  
Current Collapse ◽  
Heating Effects ◽  
Dc Bias ◽  
Gan Hemts

Current collapse phenomenon that occurs in GaN HEMTs under a moderately large DC bias stress, poses serious problems for usage of GaN technology in high-power high-frequency applications from a reliability standpoint. Additional problem in these devices operated at high biases is the appearance of self-heating effects that degrade device characteristics and, as shown in this work further amplify the problem of current collapse by changing the device electrostatics.

Recent Progress on GaN HEMTs

2008 ◽  
Vol 1108 ◽  
Author(s):  
Shigeru Nakajima ◽  
Yasunori Tateno ◽  
Seigo Sano
Keyword(s):  
High Power ◽  
Mass Production ◽  
High Frequency ◽  
Recent Progress ◽  
High Efficiency ◽  
Efficiency Performance ◽  
Gan Hemts

AbstractThis paper is overviewed the recent progress on GaN HEMTs. High power, high frequency and high efficiency performance are reported. In addition, the results about long-term reliabilities and good manufacturability demonstrate that GaN HEMTs are ready for mass production.

Progress in High-Power, High Frequency AlGaN/GaN HEMTs

2002 ◽  
Vol 194 (2) ◽  
pp. 433-438 ◽  
Author(s):  
L.F. Eastman ◽  
V. Tilak ◽  
V. Kaper ◽  
J. Smart ◽  
R. Thompson ◽  
...  
Keyword(s):  
High Power ◽  
High Frequency ◽  
Gan Hemts
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