Reliability Concerns due to Self-Heating effects in GaN HEMTs

Current collapse phenomenon that occurs in GaN HEMTs under a moderately large DC bias stress, poses serious problems for usage of GaN technology in high-power high-frequency applications from a reliability standpoint. Additional problem in these devices operated at high biases is the appearance of self-heating effects that degrade device characteristics and, as shown in this work further amplify the problem of current collapse by changing the device electrostatics.

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Current collapse induced in AlGaN/GaN HEMTs by short-term DC bias stress

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197766 ◽

2003 ◽

Cited By ~ 5

Author(s):

J.A. Mittereder ◽

S.C. Binari ◽

P.B. Klein ◽

J.A. Roussos ◽

D.S. Katzer ◽

...

Keyword(s):

Short Term ◽

Bias Stress ◽

Current Collapse ◽

Dc Bias ◽

Gan Hemts

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Creation of current collapse in GaN HEMTs due to short-term DC bias stress

GaAs Reliability 2002 Workshop ◽

10.1109/gaas.2002.1167855 ◽

2003 ◽

Author(s):

J.A. Mittereder ◽

S.C. Binari ◽

P.B. Klein ◽

J.A. Roussos ◽

D.S. Katzer ◽

...

Keyword(s):

Short Term ◽

Bias Stress ◽

Current Collapse ◽

Dc Bias ◽

Gan Hemts

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Figures of merit in high-frequency and high-power GaN HEMTs

Journal of Physics Conference Series ◽

10.1088/1742-6596/193/1/012040 ◽

2009 ◽

Vol 193 ◽

pp. 012040 ◽

Cited By ~ 8

Author(s):

F A Marino ◽

N Faralli ◽

D K Ferry ◽

S M Goodnick ◽

M Saraniti

Keyword(s):

High Power ◽

High Frequency ◽

Figures Of Merit ◽

Gan Hemts

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Modeling of GaN HEMTs on silicon with trapping and self-heating effects for RF applications

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2018.8403846 ◽

2018 ◽

Author(s):

Chuan-Wei Tsou ◽

Po-Tsung Tu ◽

Kan-Hsueh Tsai ◽

Po-Chun Yeh ◽

Heng-Yuan Lee ◽

...

Keyword(s):

Self Heating ◽

Heating Effects ◽

Gan Hemts ◽

Rf Applications

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An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

International Journal of Electrical and Computer Engineering (IJECE) ◽

10.11591/ijece.v10i2.pp1791-1804 ◽

2020 ◽

Vol 10 (2) ◽

pp. 1791

Author(s):

A. Bellakhdar ◽

A. Telia ◽

J. L. Coutaz

Keyword(s):

Analytical Model ◽

Drain Current ◽

High Electron Mobility Transistors ◽

Published Data ◽

High Electron ◽

Self Heating ◽

Heating Effects ◽

Cap Layer ◽

Gan Hemts ◽

Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

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Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

Nanoscale Advances ◽

10.1039/c9na00733d ◽

2020 ◽

Vol 2 (9) ◽

pp. 4179-4186 ◽

Cited By ~ 1

Author(s):

Pedro C. Feijoo ◽

Francisco Pasadas ◽

Marlene Bonmann ◽

Muhammad Asad ◽

Xinxin Yang ◽

...

Keyword(s):

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Drift Diffusion Model ◽

Drift Diffusion ◽

Velocity Saturation ◽

Self Heating ◽

Heating Effects ◽

Carrier Velocity ◽

High Frequency Performance

A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.

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