Continuum Modelling of Silicon Diffusion and Activation in in0.53Ga0.47As

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

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Stability of vacancy and interstitial dislocation loops in α-zirconium: atomistic calculations and continuum modelling

Journal of Nuclear Materials ◽

10.1016/j.jnucmat.2021.153059 ◽

2021 ◽

pp. 153059

Author(s):

Cong Dai ◽

Céline Varvenne ◽

Peyman Saidi ◽

Zhongwen Yao ◽

Mark R. Daymond ◽

...

Keyword(s):

Dislocation Loops ◽

Continuum Modelling ◽

Atomistic Calculations

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Oxygen and silicon diffusion-controlled processes in vitreous silica

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(80)90493-7 ◽

1980 ◽

Vol 38-39 ◽

pp. 545-550 ◽

Cited By ~ 49

Author(s):

Helmut A. Schaeffer

Keyword(s):

Vitreous Silica ◽

Controlled Processes ◽

Diffusion Controlled ◽

Silicon Diffusion

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A Critical Review of Existing Hydrogen Diffusion Models Accounting for Different Physical Variables

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.225.13 ◽

2014 ◽

Vol 225 ◽

pp. 13-18 ◽

Cited By ~ 2

Author(s):

Jesús Toribio ◽

Viktor Kharin

Keyword(s):

Plastic Strain ◽

Continuum Mechanics ◽

Critical Review ◽

Hydrogen Diffusion ◽

Hydrostatic Stress ◽

Stress And Strain ◽

Material Microstructure ◽

Continuum Modelling ◽

Physical Variables ◽

Cumulative Plastic Strain

The present paper offers a continuum modelling of trap-affected hydrogen diffusion in metals and alloys, accounting for different physical variables of both macroscopic nature (i.e., related to continuum mechanics, e.g., stress and strain) and microscopic characteristics (material microstructure, traps, etc.). To this end, the model of hydrogen diffusion assisted by the gradients of both hydrostatic stress and cumulative plastic strain,stress-and-strain assisted hydrogen diffusion, proposed and frequently used by the authors of the present paper (Toribio & Kharin) is analysed in addition to other well-known models such as those proposed by (i) McNabb & Foster, (ii) Oriani, (iii) Leblond & Dubois, (iv) Sofronis & McMeeking, (v) Krom and Bakker, showing their physical and mathematical differences and similarities to account for different physical variables.

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