(Invited) High-Performance Top-Gate and Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors Fabricated Using Continuous-Wave-Laser Lateral Crystallization on a Glass Substrate

Author(s):

A. Hara ◽

T. Meguro ◽

S. Sasaki ◽

H. Ohsawa

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Continuous Wave ◽

Double Gate ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Wave Laser ◽

High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization

10.1143/jjap.41.l311 ◽

2002 ◽

Vol 41 (Part 2, No. 3B) ◽

pp. L311-L313 ◽

Cited By ~ 86

Author(s):

Akito Hara ◽

Fumiyo Takeuchi ◽

Michiko Takei ◽

Katsuyuki Suga ◽

Kenichi Yoshino ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Alkali Glass ◽

Wave Laser ◽

High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization

10.1143/jjap.43.1269 ◽

2004 ◽

Vol 43 (4A) ◽

pp. 1269-1276 ◽

Cited By ~ 97

Author(s):

Akito Hara ◽

Michiko Takei ◽

Fumiyo Takeuchi ◽

Katsuyuki Suga ◽

Kenichi Yoshino ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Diode Pumped ◽

Wave Laser ◽

(Invited) Self-Aligned Four-Terminal Low-Temperature Polycrystalline-Silicon Thin-Film Transistors on Glass Substrate Using Continuous-Wave Laser Lateral Crystallization

ECS Transactions ◽

10.1149/07510.0037ecst ◽

2016 ◽

Vol 75 (10) ◽

pp. 37-47 ◽

Author(s):

A. Hara ◽

H. Ohsawa

Keyword(s):

Thin Film ◽

Low Temperature ◽

Glass Substrate ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Wave Laser ◽

Tri-Gate Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization with Improved Electron Transport Properties

10.7567/jjap.51.02bj03 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BJ03 ◽

Cited By ~ 9

Author(s):

Shuntaro Fujii ◽

Shin-Ichiro Kuroki ◽

Yuya Kawasaki ◽

Koji Kotani

Keyword(s):

Thin Film ◽

Electron Transport ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Electron Transport Properties ◽

Wave Laser ◽

Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization

10.1143/jjap.43.l790 ◽

2004 ◽

Vol 43 (No. 6B) ◽

pp. L790-L793 ◽

Cited By ~ 3

Author(s):

Akito Hara ◽

Michiko Takei ◽

Kenichi Yoshino ◽

Fumiyo Takeuchi ◽

Nobuo Sasaki

Keyword(s):

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Double Gate ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Alkali Glass ◽

Diode Pumped ◽

Wave Laser ◽

Low-Temperature Polycrystalline-Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization and Metal/Hafnium Oxide Gate Stack on Nonalkaline Glass Substrate

IEICE Transactions on Electronics ◽

10.1587/transele.e100.c.94 ◽

2017 ◽

Vol E100.C (1) ◽

pp. 94-100 ◽

Author(s):

Tatsuya MEGURO ◽

Akito HARA

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Hafnium Oxide ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Wave Laser ◽

Tri-Gate Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization with Improved Electron Transport Properties

10.1143/jjap.51.02bj03 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BJ03 ◽

Author(s):

Shuntaro Fujii ◽

Shin-Ichiro Kuroki ◽

Yuya Kawasaki ◽

Koji Kotani

Keyword(s):

Thin Film ◽

Electron Transport ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Electron Transport Properties ◽

Wave Laser ◽

Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization

10.1143/jjap.50.04dh10 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DH10 ◽

Cited By ~ 4

Author(s):

Shuntaro Fujii ◽

Shin-Ichiro Kuroki ◽

Koji Kotani ◽

Takashi Ito

Keyword(s):

Thin Film ◽

Electron Mobility ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Wave Laser ◽

(Invited) Self-Aligned Four-Terminal Low-Temperature Polycrystalline-Silicon Thin-Film Transistors on Glass Substrate Using Continuous-Wave Laser Lateral Crystallization

ECS Meeting Abstracts ◽

10.1149/ma2016-02/33/2115 ◽

2016 ◽

Keyword(s):

Thin Film ◽

Low Temperature ◽

Glass Substrate ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Wave Laser ◽

Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization

10.7567/jjap.50.04dh10 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DH10 ◽

Author(s):

Shuntaro Fujii ◽

Shin-Ichiro Kuroki ◽

Koji Kotani ◽

Takashi Ito

Keyword(s):

Thin Film ◽

Electron Mobility ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Wave Laser ◽