Growth Rate and Temperature Dependence of Oxygen Incorporation in Si1-XGex Thin Films

2016 ◽  
Vol 75 (8) ◽  
pp. 551-560
Author(s):  
C. A. Jackson ◽  
A. J. Williams ◽  
P. W. Deelman
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Temperature Dependence ◽  
Oxygen Incorporation

TEMPERATURE DEPENDENCE OF THE CRYSTAL GROWTH RATE IN POLAR GLACIERS

1987 ◽  
Vol 48 (C1) ◽  
pp. C1-661-C1-662 ◽  
Author(s):  
J. R. PETIT ◽  
P. DUVAL ◽  
C. LORIUS
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Temperature Dependence ◽  
Crystal Growth Rate

Temperature dependence of ZnO thin films grown on Si substrate

2007 ◽  
Vol 19 (8-9) ◽  
pp. 749-754 ◽  
Author(s):  
Y. Y. Kim ◽  
C. H. Ahn ◽  
S. W. Kang ◽  
B. H. Kong ◽  
S. K. Mohanta ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Zno Thin Films ◽  
Si Substrate

scholarly journals The temperature dependence of magnetic anisotropy of Nd-Fe-B thin films

AIP Advances ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 056213 ◽  
Author(s):  
Takuya Sato ◽  
Ryuji Hashimoto ◽  
Yoshitomo Tanaka ◽  
Kenichi Suzuki ◽  
Yasushi Enokido ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Temperature Dependence

The low temperature dependence of magnetization of as-deposited Fe-Hf-C-N nanocrystalline thin films

1999 ◽  
Vol 12 (5-8) ◽  
pp. 1097-1102 ◽  
Author(s):  
K.S. Kirn ◽  
Y.H. Seong ◽  
S.C. Yu ◽  
S.H. Han ◽  
H.J. Kim
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Nanocrystalline Thin Films

Temperature dependence of the mechanical properties of tetrahedrally coordinated amorphous carbon thin films

2005 ◽  
Vol 87 (16) ◽  
pp. 161915 ◽  
Author(s):  
David A. Czaplewski ◽  
J. P. Sullivan ◽  
T. A. Friedmann ◽  
J. R. Wendt
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Temperature Dependence ◽  
Amorphous Carbon ◽  
Carbon Thin Films

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

Temperature dependence of the photochromism of naphthopyrans in functionalized sol–gel thin films

2006 ◽  
Vol 16 (18) ◽  
pp. 1734-1740 ◽  
Author(s):  
Rosario Pardo ◽  
Marcos Zayat ◽  
David Levy
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Sol Gel
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