Temperature dependence of ZnO thin films grown on Si substrate

In this work, the dielectric response of ZnO thin films has been studied over a temperature range of 200 K - 550 K. The dielectric response of polycrystalline ZnO thin films in the frequency domain was measured from 42 Hz - to 5 MHz with a small AC signal amplitude at different temperatures. Influence of the light on conductivity has been also investigated. A universal power law relation was brought into picture to explain the frequency dependence of AC conductivity. The temperature dependence of AC conductivity was analyzed in detail. The activation energy obtained from the temperature dependence of AC conductivity was attributed to the shallow trap-controlled space charge conduction in the bulk of the sample.

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Top electrode-dependent resistance switching behaviors of ZnO thin films deposited on Pt/Ti/SiO2/Si substrate

Microelectronic Engineering ◽

10.1016/j.mee.2011.12.003 ◽

2012 ◽

Vol 93 ◽

pp. 35-38 ◽

Cited By ~ 43

Author(s):

Ming Hua Tang ◽

Bo Jiang ◽

Yong Guang Xiao ◽

Zheng Qiu Zeng ◽

Zi Ping Wang ◽

...

Keyword(s):

Thin Films ◽

Resistance Switching ◽

Zno Thin Films ◽

Si Substrate

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Optimization of RF sputtering process parameters on electrical resistivity, deposition rate and sensitivity of Al-doped ZnO thin films grown on Si substrate using grey-Taguchi technique

Bulletin of Materials Science ◽

10.1007/s12034-019-1800-x ◽

2019 ◽

Vol 42 (3) ◽

Author(s):

M Vanmathi ◽

M Mohamed Ismail ◽

M Senthil Kumar

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Deposition Rate ◽

Process Parameters ◽

Rf Sputtering ◽

Zno Thin Films ◽

Taguchi Technique ◽

Si Substrate ◽

Doped Zno ◽

Grey Taguchi

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Growth and Characterizations of Electrochemically Deposited ZnO Thin Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.135 ◽

2007 ◽

Vol 124-126 ◽

pp. 135-138 ◽

Cited By ~ 2

Author(s):

Yumeji Takashige ◽

Takuya Nebiki ◽

Tadashi Narusawa

Keyword(s):

Thin Films ◽

Bath Temperature ◽

Zno Thin Films ◽

Si Substrate ◽

Cell Temperature ◽

Cathodic Potential ◽

Si Substrates ◽

Similar Tendency ◽

Electrochemical Deposition Method ◽

Electrochemically Deposited

In this study,Wepresent ZnO thin films using electrochemical deposition method. ZnO thin films are deposited onto metal(Cu) and semiconductor (n-type Si) substrates. The electrolyte consists of a 0.1M Zn(NO3)2 solution, and we applied various potentials at different bath temperatures. XRD shows preferential orientation to (002) that increases with the applied cathodic potential and the bath temperature. Similar tendency is shown on both Cu and n-type Si substrates. SEM micrographs show ZnO surface morphology is greatly affected by the applied cathodic potentials. The RBS analysis reflects the rough morphology of ZnO thin film. The composition ratio Zn:O on n-type Si substrate is determined to be 1.0:1.3 ± 0.3 at the cathodic potential of -1.0[V] and the cell temperature of 70.

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