Anisotropic Reactive Ion Etching of MoSi2 and In Situ Doped n+ and p+ Polysilicon Using Cl2 and BCl3

Journal of The Electrochemical Society ◽

10.1149/1.2096274 ◽

1988 ◽

Vol 135 (9) ◽

pp. 2373-2378 ◽

Author(s):

T. C. Mele ◽

S. C. Arney ◽

J. P. Krusius ◽

N. C. MacDonald

Keyword(s):

Reactive Ion Etching ◽

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7387. An investigation of the roughening of silicon(100) surfaces in Cl2/CCl4 reactive ion etching plasmas by in situ ellipsometry and quadropole mass spectrometry: the role of CCl4

Vacuum ◽

10.1016/0042-207x(91)91194-s ◽

1991 ◽

Vol 42 (8-9) ◽

pp. 592

Keyword(s):

Mass Spectrometry ◽

Reactive Ion Etching ◽

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In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1431961 ◽

2002 ◽

Vol 20 (1) ◽

pp. 154 ◽

Author(s):

Kitt Wai Kok ◽

Won Jong Yoo ◽

K. Sooriakumar

Keyword(s):

Aspect Ratio ◽

High Aspect Ratio ◽

Reactive Ion Etching ◽

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Deep reactive ion etching of in situ boron doped LPCVD Ge0.7Si0.3 using SF6 and O2 plasma

Microelectronic Engineering ◽

10.1016/j.mee.2013.02.034 ◽

2013 ◽

Vol 110 ◽

pp. 311-314 ◽

Author(s):

S.N.R. Kazmi ◽

C. Salm ◽

J. Schmitz

Keyword(s):

Reactive Ion Etching ◽

Ion Etching ◽

Deep Reactive Ion Etching ◽

Boron Doped ◽

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In situ XPS analysis of the tungsten/sublayer interface after SF6 based reactive ion etching

Applied Surface Science ◽

10.1016/0169-4332(93)90589-4 ◽

1993 ◽

Vol 70-71 ◽

pp. 613-618 ◽

Author(s):

N. Couchman ◽

C. Pacifico ◽

G. Turban ◽

B. Grolleau

Keyword(s):

Reactive Ion Etching ◽

Xps Analysis ◽

Ion Etching ◽

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A micromachined sensor for in-situ polymer buildup monitoring in reactive ion etching systems

Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97) ◽

10.1109/sensor.1997.635473 ◽

2002 ◽

Author(s):

Jinsoo Kim ◽

K.D. Wise

Keyword(s):

Reactive Ion Etching ◽

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Fabrication of low-threshold InGaAs/GaAs ridge waveguide lasers by using in situ monitored reactive ion etching

10.1063/1.40644 ◽

1991 ◽

Author(s):

C. P. Chao ◽

S. Y. Hu ◽

P. Floyd ◽

K. -K. Law ◽

J. L. Merz ◽

...

Keyword(s):

Reactive Ion Etching ◽

Ridge Waveguide ◽

Ion Etching ◽

Waveguide Lasers ◽

Low Threshold ◽

Ridge Waveguide Lasers

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An investigation of the reactive ion etching of polysilicon in pure Cl2 plasmas by in situ ellipsometry and quadrupole mass spectrometry

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584958 ◽

1990 ◽

Vol 8 (5) ◽

pp. 1044 ◽

Author(s):

D. J. Thomas

Keyword(s):

Mass Spectrometry ◽

Reactive Ion Etching ◽

Quadrupole Mass ◽

Ion Etching ◽

Quadrupole Mass Spectrometry

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Two-channel spectroscopic reflectometry for in situ monitoring of blanket and patterned structures during reactive ion etching

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1327301 ◽

2000 ◽

Vol 18 (6) ◽

pp. 2785 ◽

Author(s):

Brooke S. Stutzman ◽

Hsu-Ting Huang ◽

Fred L. Terry

Keyword(s):

Reactive Ion Etching ◽

In Situ Monitoring ◽

Ion Etching ◽

Patterned Structures ◽

Spectroscopic Reflectometry

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Neural Network-Based Real-Time Malfunction Diagnosis of Reactive Ion Etching Using In Situ Metrology Data

IEEE Transactions on Semiconductor Manufacturing ◽

10.1109/tsm.2004.831952 ◽

2004 ◽

Vol 17 (3) ◽

pp. 408-421 ◽

Author(s):

S.J. Hong ◽

G.S. May

Keyword(s):

Neural Network ◽

Real Time ◽

Reactive Ion Etching ◽

Ion Etching ◽

Malfunction Diagnosis ◽

In Situ Metrology

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An investigation of the roughening of silicon(100) surfaces in Cl2/CCl4 reactive ion etching plasmas by in situ ellipsometry and quadrupole mass spectrometry: The role of CCl4

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585053 ◽

1990 ◽

Vol 8 (3) ◽

pp. 516 ◽

Author(s):

D. J. Thomas

Keyword(s):

Mass Spectrometry ◽

Reactive Ion Etching ◽

Quadrupole Mass ◽

Ion Etching ◽

Quadrupole Mass Spectrometry

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