Enhancement of Long-Persistence by Ce Co-Doping in CaS:Eu[sup 2+], Tm[sup 3+] Red Phosphor

2006 ◽  
Vol 153 (11) ◽  
pp. H198 ◽  
Author(s):  
Dongdong Jia
Keyword(s):  
RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1469-1476 ◽  
Author(s):  
Jiaqi Long ◽  
Xuanyi Yuan ◽  
Chaoyang Ma ◽  
Miaomiao Du ◽  
Xiaoli Ma ◽  
...  

(a) Emission spectrum of LEDs fabricated with 445 nm blue chip and Sr2Si5N8:Eu2+red phosphor. (b) Emission spectrum of LEDs fabricated with 445 nm blue chip and Sr4Al14O25:Mn4+phosphor. (c and d) Absorption spectrum of chlorophyll-b and chlorophyll-a.


2018 ◽  
Vol 11 (01) ◽  
pp. 1850012 ◽  
Author(s):  
Mei Zhu ◽  
Yunfei Tian ◽  
Jie Chen ◽  
Mi Fei ◽  
Liangrui He ◽  
...  

An oxide red phosphor, with outstanding superiority in manufacturing cost, is particular desired for white light-emitting diodes (LEDs). In this work, a strategy to controllable site occupation of Eu in Sr3Al2O6 to give red light emission was employed with a three-step route: the combustion of sol–gel to prepare superfine precursor, the solid-sate reaction of precursor to incorporate Eu into small voids, and a second reduction in 25%H[Formula: see text]75%N2 atmosphere. Accordingly, a new red phosphor of Sr3Al2O6:Eu,Dy,Li was developed. The results shows the red luminescence of Sr3Al2O6:Eu could be improved by doping Dy[Formula: see text] and be further improved by co-doping Li[Formula: see text]. The red luminescence involves the [Formula: see text]-[Formula: see text] transition of Eu[Formula: see text] and the auto-ionization of electron from Eu[Formula: see text] to conduction band. Dy[Formula: see text] acts as a trap center of the thermally released electrons then with electrons returned to the 4[Formula: see text] ground state of Eu[Formula: see text], red light was emitted. The co-substitution of Sr[Formula: see text]–Sr[Formula: see text] by Dy[Formula: see text]–Li[Formula: see text] is helpful to balance defects and improve crystallization.


2020 ◽  
Vol 220 ◽  
pp. 116976 ◽  
Author(s):  
Ya-Nan Li ◽  
Dan Zhao ◽  
Lin-Ying Shi ◽  
Shao-Jie Dai ◽  
Yan-Ping Fan ◽  
...  

2011 ◽  
Vol 46 (4) ◽  
pp. 627-629 ◽  
Author(s):  
Xue Yu ◽  
Xuhui Xu ◽  
Jianbei Qiu
Keyword(s):  

2018 ◽  
Vol 201 ◽  
pp. 314-320 ◽  
Author(s):  
Yuejun Zhu ◽  
Zhongxian Qiu ◽  
Bingyan Ai ◽  
Yiting Lin ◽  
Wenli Zhou ◽  
...  

Author(s):  
G.Y. Fan ◽  
Bruce Mrosko ◽  
Mark H. Ellisman

A lens coupled CCD camera showing single electron sensitivity has been built for TEM applications. The design is illustrated in Fig. 1. The bottom flange of a JEM-4000EX microscope is replaced by a special flange which carries a large rectangular leaded glass window, 22 mm thick. A 20 μm thick layer of red phosphor is coated on the window, and the entire window is sputter-coated with a thin layer of Au/Pt. A two-lens relay system is used to provide efficient coupling between the image on the phosphor scintillator and the CCD imager. An f1.0 lens (Goerz optical) with front focal length 71.6 mm is used as the collector. A mirror prism, of the Amici type, is used to "bend" the optical path by 90° to prevent X-rays which may penetrate the leaded glass from hitting the CCD detector. Images may be relayed directly to the camera (1:1) or demagnified by a factor of up to 3:1 by moving the lens assembly.


2020 ◽  
Vol 31 (13) ◽  
pp. 10072-10077 ◽  
Author(s):  
Yongyan Xu ◽  
Kai Zhang ◽  
Chun Chang
Keyword(s):  

2019 ◽  
Vol 46 (10) ◽  
pp. 1485-1493 ◽  
Author(s):  
Fatemeh Jahanbakhsh ◽  
Alexander Lorenz

2019 ◽  
Vol 166 (4) ◽  
pp. A658-A666 ◽  
Author(s):  
Zhenya Wang ◽  
Limei Sun ◽  
Wenyun Yang ◽  
Jinbo Yang ◽  
Kai Sun ◽  
...  

2014 ◽  
Vol 1052 ◽  
pp. 163-168 ◽  
Author(s):  
Xiao Na Li ◽  
Lu Jie Jin ◽  
Li Rong Zhao ◽  
Chuang Dong

Thermal stability, adhesion and electronic resistivity of the Cu alloy films with diffusion barrier elements (large atom Sn and small atom C) have been studied. Ternary Cu (0.6 at.% Sn, 2 at.% C) films were prepared by magnetron co-sputtering in this work. The microstructure and resistivity analysis on the films showed that the Cu (0.6 at.% Sn, 2 at.% C) film had better adhesion with the substrate and lower resistivity (2.8 μΩ·cm, after annealing at 600 °C for 1 h). Therefore, the doping of carbon atoms makes less effect to the resistivity by decreasing the amount of the doped large atoms, which results in the decreasing of the whole resistivity of the barrierless structure. After annealing, the doped elements in the film diffused to the interface to form self-passivated amorphous layer, which could further hinder the diffusion between Cu and Si. So thus ternary Cu (0.6 at.% Sn, 2 at.% C) film had better diffusion barrier effect. Co-doping of large atoms and small atoms in the Cu film is a promising way to improve the barrierless structure.


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