Improvement of Electron-Gun Evaporated Aluminum Oxide for Pentacene Thin-Film Transistor

2009 ◽  
Vol 12 (1) ◽  
pp. H11 ◽  
Author(s):  
Po-Tsun Liu ◽  
Yi-Teh Chou ◽  
Yi-Yu Kao



RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5622-5628 ◽  
Author(s):  
Yunyong Nam ◽  
Hee-Ok Kim ◽  
Sung Haeng Cho ◽  
Sang-Hee Ko Park

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al2O3) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (Tdep).



2018 ◽  
Author(s):  
Namgyung Hwang ◽  
Yooseong Lim ◽  
Sehyeong Lee ◽  
Jeong Seok Lee ◽  
Moonsuk Yi


RSC Advances ◽  
2015 ◽  
Vol 5 (124) ◽  
pp. 102362-102366 ◽  
Author(s):  
Hyungjin Park ◽  
Yunyong Nam ◽  
Jungho Jin ◽  
Byeong-Soo Bae

Undecomposed ethylene glycol residuals in solution processed aluminum oxide gate dielectric result in the frequency-dependent capacitance.





2019 ◽  
Vol 7 (4) ◽  
pp. 1048-1056 ◽  
Author(s):  
Nico Koslowski ◽  
Shawn Sanctis ◽  
Rudolf C. Hoffmann ◽  
Michael Bruns ◽  
Jörg J. Schneider

Generation of dielectric amorphous aluminum oxide using a novel chimie douce molecular precursor route is reported.



2017 ◽  
Vol 38 (7) ◽  
pp. 879-882 ◽  
Author(s):  
Shiben Hu ◽  
Kuankuan Lu ◽  
Honglong Ning ◽  
Zeke Zheng ◽  
Hongke Zhang ◽  
...  


2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin






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