Synthesis, dielectric properties and application in a thin film transistor device of amorphous aluminum oxide AlxOy using a molecular based precursor route

2019 ◽  
Vol 7 (4) ◽  
pp. 1048-1056 ◽  
Author(s):  
Nico Koslowski ◽  
Shawn Sanctis ◽  
Rudolf C. Hoffmann ◽  
Michael Bruns ◽  
Jörg J. Schneider
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Aluminum Oxide ◽  
Thin Film Transistor ◽  
Molecular Precursor ◽  
Precursor Route

Generation of dielectric amorphous aluminum oxide using a novel chimie douce molecular precursor route is reported.

scholarly journals Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

RSC Advances ◽  
2019 ◽  
Vol 9 (54) ◽  
pp. 31386-31397 ◽  
Author(s):  
Nico Koslowski ◽  
Rudolf C. Hoffmann ◽  
Vanessa Trouillet ◽  
Michael Bruns ◽  
Sabine Foro ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Yttrium Oxide ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Aluminium Oxide ◽  
Oxide Formation ◽  
Molecular Precursor ◽  
P Transformation ◽  
Precursor Route

Transformation of a new molecular precursor allows the formation of yttrium oxide under moderate conditions displaying high voltage breakthrough behaviour.

scholarly journals Tunable high-κ ZrxAl1−xOy thin film dielectrics from all-inorganic aqueous precursor solutions

RSC Advances ◽  
2017 ◽  
Vol 7 (62) ◽  
pp. 39147-39152 ◽  
Author(s):  
K. N. Woods ◽  
E. C. Waddington ◽  
C. A. Crump ◽  
E. A. Bryan ◽  
T. S. Gleckler ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Dielectric Properties ◽  
Aluminum Oxide ◽  
Oxide Thin Film ◽  
Solution Route ◽  
Thin Film Dielectrics ◽  
Film Dielectric ◽  
Inorganic Aqueous Solution

An all-inorganic, aqueous solution route enables facile control of composition and optimization of zirconium aluminum oxide thin film dielectric properties.

scholarly journals Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5622-5628 ◽  
Author(s):  
Yunyong Nam ◽  
Hee-Ok Kim ◽  
Sung Haeng Cho ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Hydrogen Diffusion ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition ◽  
Amorphous Ingazno

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al2O3) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (Tdep).

Solution based indium zinc oxide thin film transistor with diffused aluminum oxide insulator layer

2018 ◽  
Author(s):  
Namgyung Hwang ◽  
Yooseong Lim ◽  
Sehyeong Lee ◽  
Jeong Seok Lee ◽  
Moonsuk Yi
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Aluminum Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Insulator Layer ◽  
Indium Zinc Oxide

Space charge-induced unusually-high mobility of a solution-processed indium oxide thin film transistor with an ethylene glycol incorporated aluminum oxide gate dielectric

RSC Advances ◽  
2015 ◽  
Vol 5 (124) ◽  
pp. 102362-102366 ◽  
Author(s):  
Hyungjin Park ◽  
Yunyong Nam ◽  
Jungho Jin ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Ethylene Glycol ◽  
Aluminum Oxide ◽  
Space Charge ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Indium Oxide Thin Film

Undecomposed ethylene glycol residuals in solution processed aluminum oxide gate dielectric result in the frequency-dependent capacitance.

Improvement of Electron-Gun Evaporated Aluminum Oxide for Pentacene Thin-Film Transistor

2009 ◽  
Vol 12 (1) ◽  
pp. H11 ◽  
Author(s):  
Po-Tsun Liu ◽  
Yi-Teh Chou ◽  
Yi-Yu Kao
Keyword(s):  
Thin Film ◽  
Aluminum Oxide ◽  
Thin Film Transistor ◽  
Electron Gun

High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer

2017 ◽  
Vol 38 (7) ◽  
pp. 879-882 ◽  
Author(s):  
Shiben Hu ◽  
Kuankuan Lu ◽  
Honglong Ning ◽  
Zeke Zheng ◽  
Hongke Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Aluminum Oxide ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Effect of transient behavior on off-state current in poly-Si junctionless nanowire thin-film transistor

2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Transient Behavior
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