Low-Temperature Measurements on Germanium-on-Insulator pMOSFETs: Evaluation of the Background Doping Level and Modeling of the Threshold Voltage Temperature Dependence

2019 ◽  
Vol 19 (4) ◽  
pp. 145-152 ◽  
Author(s):  
William Van Den Daele ◽  
Emmanuel Augendre ◽  
Krunoslav Romanjek ◽  
Cyrille Le Royer ◽  
Laurent Clavelier ◽  
...  
The Analyst ◽  
2015 ◽  
Vol 140 (4) ◽  
pp. 1008-1013 ◽  
Author(s):  
Deqi Mao ◽  
Xiaogang Liu ◽  
Qinglong Qiao ◽  
Wenting Yin ◽  
Miao Zhao ◽  
...  

The emission intensities of coumarin 545 solution exhibit a low temperature dependence, with a record-low temperature coefficient of only ∼0.025% per °C.


1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.


1999 ◽  
Vol 12 (5-8) ◽  
pp. 1097-1102 ◽  
Author(s):  
K.S. Kirn ◽  
Y.H. Seong ◽  
S.C. Yu ◽  
S.H. Han ◽  
H.J. Kim

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