Comparative Study of AlGaN/AlN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Ni/Au Gate Electrode
2019 ◽
pp. 391-402
◽
2020 ◽
Vol 67
(5)
◽
pp. 1939-1945
◽
2013 ◽
Vol 52
(8S)
◽
pp. 08JN08
◽
2019 ◽
Vol 58
(SC)
◽
pp. SCCD21
◽
2012 ◽
Vol 33
(7)
◽
pp. 997-999
◽