150 mm InP-to-Silicon Direct Wafer Bonding for Silicon Photonic Integrated Circuits

2019 ◽  
Vol 16 (8) ◽  
pp. 235-241 ◽  
Author(s):  
Di Liang ◽  
Alexander Fang ◽  
Douglas Oakley ◽  
Antonio Napoleone ◽  
David Chapman ◽  
...  

2008 ◽  
Vol 37 (10) ◽  
pp. 1552-1559 ◽  
Author(s):  
Di Liang ◽  
Alexander W. Fang ◽  
Hyundai Park ◽  
Tom E. Reynolds ◽  
Keith Warner ◽  
...  

2017 ◽  
Vol 29 (21) ◽  
pp. 1896-1899 ◽  
Author(s):  
Xinru Wu ◽  
Ke Xu ◽  
Wen Zhou ◽  
Chi Wai Chow ◽  
Hon Ki Tsang

2012 ◽  
Vol 195 ◽  
pp. 75-78
Author(s):  
Chung Kyung Jung ◽  
Sung Wook Joo ◽  
Seoung Hun Jeong ◽  
Sang Wook Ryu ◽  
Han Choon Lee ◽  
...  

Over the last decades, the concept of backside illumination (BSI) sensors has become one of the leading solutions to optical challenges such as improved quantum efficiency (QE), and cross-talk, respectively [1-. Direct wafer bonding is a method for fabricating advanced substrates for micro-electrochemical systems (MEMS) and integrated circuits (IC). The most typical example of such an advanced substrate is the silicon-on-insulator (SOI) wafer.


2020 ◽  
Vol 14 (9) ◽  
pp. 578-584 ◽  
Author(s):  
R. Maiti ◽  
C. Patil ◽  
M. A. S. R. Saadi ◽  
T. Xie ◽  
J. G. Azadani ◽  
...  

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