Electrochemical Investigation of Electroactive Layer Deposit onto Glass Substrate: Cases of Organic Thin Film and Gold Nanoparticles

2020 ◽  
Vol 44 (45) ◽  
pp. 19672-19682
Author(s):  
S. P. Tiwari ◽  
A. Kumar ◽  
K. Kumar ◽  
M. R. Singh ◽  
G. P. Bharti ◽  
...  

The Au thin film was fabricated on silica glass substrate (a) and UCNPs were fabricated over (a) to get the plasmonic resonance (image b) with the coupling of metal. The UC emission enhancement after confinement of metal and NPs were simulated (c).


Small ◽  
2015 ◽  
Vol 11 (18) ◽  
pp. 2132-2138 ◽  
Author(s):  
Hee Sung Lee ◽  
Jae Min Shin ◽  
Pyo Jin Jeon ◽  
Junyeong Lee ◽  
Jin Sung Kim ◽  
...  

2016 ◽  
Vol 18 (27) ◽  
pp. 18500-18506 ◽  
Author(s):  
Apichat Pangdam ◽  
Supeera Nootchanat ◽  
Ryousuke Ishikawa ◽  
Kazunari Shinbo ◽  
Keizo Kato ◽  
...  

A schematic of the fabricated UL-AuNP-enhanced OSCs.


2014 ◽  
Vol 24 (31) ◽  
pp. 4886-4892 ◽  
Author(s):  
Takeo Minari ◽  
Yuki Kanehara ◽  
Chuan Liu ◽  
Kenji Sakamoto ◽  
Takeshi Yasuda ◽  
...  

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


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