Low Temperature Processing of Si-based Dielectric Thin Films

2019 ◽  
Vol 35 (4) ◽  
pp. 241-257
Author(s):  
Pooran Joshi ◽  
A. Tolis Voutsas ◽  
John Hartzell

1999 ◽  
Vol 596 ◽  
Author(s):  
K. Kato

AbstractCaBi2Ta2O9 and BaBi2Ta2O9 thin films were successfully prepared by using triple alkoxide precursors such as Ca[BiTa(OC2H5)9]2 and Ba[BiTa(OC2H5)9]2, respectively. As-deposited films were amorphous and crystallized below 500°C by rapid thermal annealing in oxygen. The crystallinity improved with annealing temperature. The development of the crystal structure and surface topography of the thin films were investigated. Additionally, some electrical properties were evaluated.


1999 ◽  
Vol 140 (1-2) ◽  
pp. 150-155 ◽  
Author(s):  
Jae-Sun Kim ◽  
Cheol-Hoon Yang ◽  
Soon-Gil Yoon ◽  
Won-Youl Choi ◽  
Ho-Gi Kim

1997 ◽  
Vol 14 (1-4) ◽  
pp. 123-131 ◽  
Author(s):  
Yasuyuki Ito ◽  
Maho Ushikubo ◽  
Seiichi Yokoyama ◽  
Hironori Matsunaga ◽  
Tsutomu Atsuki ◽  
...  

2016 ◽  
Vol 8 (20) ◽  
pp. 13027-13036 ◽  
Author(s):  
Jonathan Watté ◽  
Petra Lommens ◽  
Glenn Pollefeyt ◽  
Mieke Meire ◽  
Klaartje De Buysser ◽  
...  

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