Low-Temperature Processing Using Triple Alkoxide Precursors for Layer-Structured Perovskite Thin Films: Preparation and Characterization of Mbi2Ta2O9 (M: Ca or Ba) Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
K. Kato
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Surface Topography ◽  
Annealing Temperature ◽  
Low Temperature Processing ◽  
Deposited Films ◽  
Alkoxide Precursors

AbstractCaBi2Ta2O9 and BaBi2Ta2O9 thin films were successfully prepared by using triple alkoxide precursors such as Ca[BiTa(OC2H5)9]2 and Ba[BiTa(OC2H5)9]2, respectively. As-deposited films were amorphous and crystallized below 500°C by rapid thermal annealing in oxygen. The crystallinity improved with annealing temperature. The development of the crystal structure and surface topography of the thin films were investigated. Additionally, some electrical properties were evaluated.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Synthesis and characterization of polycrystalline CuInS2 thin films for solar cell devices at low temperature processing conditions

2010 ◽  
Vol 10 (3) ◽  
pp. S379-S382 ◽  
Author(s):  
Mi Sun Park ◽  
Seung Yeol Han ◽  
Eun Jin Bae ◽  
Tae Jin Lee ◽  
Chih Hung Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Low Temperature ◽  
Synthesis And Characterization ◽  
Processing Conditions ◽  
Low Temperature Processing ◽  
Cuins2 Thin Films

BaZrO3Thin Films For Humidity Gas Sensor

2007 ◽  
Vol 1010 ◽  
Author(s):  
XiaoXin Chen ◽  
Michael Sorenson ◽  
Clayton Butler ◽  
Loren Rieth ◽  
Mark S. Miller ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Gas Sensor ◽  
Ionic Conduction ◽  
Gas Sensing ◽  
Gas Sensitivity ◽  
Structure And Morphology ◽  
Deposited Films

AbstractMicroscale (MEMS) gas sensing devices for power plant and automobile exhaust gas are being developed. Bulk BaZrO3 has been previously found to be sensitive to H2O at high temperatures, but was never studied in a thin film form. This research thrust focuses on undoped BaZrO3 and doped BaZrO3 with Y.Thin films were deposited on oxidized n-type silicon substrates at room temperature from ceramic targets with an Ar sputtering ambient. Various deposition pressures and deposition powers were used for the initial investigation. The structural and electrical properties of the deposited films were characterized to investigate their relationships to the deposition process parameters. X-ray diffraction (XRD) was used to measure the crystal structure of the deposited films, and in particular was used to determine if any crystallographic texture is present in the films. XRD results indicate the as-deposited films are amorphous before annealing. Films sputtered with and without oxygen in the ambient were compared. The crystal structure and morphology of BaZrO3 and BaZrO3 doped with Y after annealing were also determined. The materials changed from amorphous to crystalline after annealing at temperatures of 800 °C and 1000 °C for 3 hours in forming gas (2% H2 balanced with Ar gas) and oxygen. Temperature was found to dominate over deposition conditions in determining the final film structure. Atomic force microscopy was used to examine the morphology of the thin films. Gas sensor test structures using a Pt thin film metallization for interdigitated electrode structures were fabricated for gas sensing measurements. The experiments with the completed test structures measured the materials¡¦ resistivity as a function of temperature and gas concentration. Both materials decrease in resistance with increasing temperature, which is consistent with ionic conduction. Some experiments tested the gas sensitivity and selectivity of the films to the target gas H2O vapor (humidity) and possible cross sensitive gases H2 and CO2. Both materials need further development to evaluate their suitability for thin film sensors. First, the films were found to be highly resistive, making characterization of the electrical properties very difficult. Second, O2 ambient annealing gas will be applied to compare the crystal structure and morphology of both films with an Ar ambient annealing process.

Characterization of Indium Sulfide Thin Films Containing Copper

2009 ◽  
Vol 1165 ◽  
Author(s):  
Nicolas Barreau ◽  
Mickael Tessier
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Indium Sulfide ◽  
Optical And Electrical Properties ◽  
Crystalline Matrix

AbstractThe crystalline, optical and electrical properties of In2S3 containing copper thin films are investigated. Increasing the amount of copper within the In2S3 crystalline matrix yields reduced bandgap value and hindered conductivity. The films investigated being synthesized at low temperature (200 °C), it is likely they have similar properties as the materials formed at the CuIn1-xGaxSe2/In2S3 interface.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Elaboration and Characterization of Mg-Doped ZnO Thin Films by Thermal Evaporation: Annealing Temperature Effect

2021 ◽  
Author(s):  
Fouaz Lekoui ◽  
Salim Hassani ◽  
Mohammed Ouchabane ◽  
Hocine Akkari ◽  
Driss Dergham ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Effect ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mg Doped

Effect of annealing temperature on the microstructure and optical–electrical properties of Cu–Al–O thin films

2013 ◽  
Vol 74 (12) ◽  
pp. 1672-1677 ◽  
Author(s):  
Y.J. Zhang ◽  
Z.T. Liu ◽  
D.Y. Zang ◽  
X.S. Che ◽  
L.P. Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature

Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

scholarly journals Crystallization and characterization of Pb2Nb2O7 thin films prepared at high pressure and low temperature

2008 ◽  
Vol 69 (2-3) ◽  
pp. 475-479 ◽  
Author(s):  
Chung-Han Wu ◽  
Mohammad Qureshi ◽  
Chung-Hsin Lu
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Low Temperature

Effects of LaNiO3 seeding layers on the crystal structure and electrical properties in 0.94(Bi0.5Na0.5)TiO3–0.06BaTiO3 thin films

2015 ◽  
Vol 41 (10) ◽  
pp. 12980-12987 ◽  
Author(s):  
Peng Li ◽  
Jiwei Zhai ◽  
Huarong Zeng ◽  
Kunyu Zhao ◽  
Bo Shen ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties
Sign in / Sign up

Export Citation Format

Share Document