Developing GLAD Parameters to Control the Deposition of Nanostructured Thin Film

In this paper, we describe the device developed to control the deposition parameters to manage the glancing angle deposition (GLAD) process of metal-oxide thin films for gas-sensing applications. The GLAD technique is based on a set of parameters such as the tilt, rotation, and substrate temperature. All parameters are crucial to control the deposition of nanostructured thin films. Therefore, the developed GLAD controller enables the control of all parameters by the scientist during the deposition. Additionally, commercially available vacuum components were used, including a three-axis manipulator. High-precision readings were tested, where the relative errors calculated using the parameters provided by the manufacturer were 1.5% and 1.9% for left and right directions, respectively. However, thanks to the formula developed by our team, the values were decreased to 0.8% and 0.69%, respectively.

Fabrication of Metal (Cu and Cr) Incorporated Nickel Oxide Films for Electrochemical Oxidation of Methanol

Methanol electrochemical oxidation in a direct methanol fuel cell (DMFC) is considered to be an efficient pathway for generating renewable energy with low pollutant emissions. NiO−CuO and Ni0.95Cr0.05O2+δ thin films were synthesized using a simple dip-coating method and tested for the electro-oxidation of methanol. These synthesized electrocatalysts were characterized by X-ray diffraction spectroscopy (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDS), and Raman spectroscopy. Different electrochemical techniques were used to investigate the catalytic activity of these prepared electrocatalysts for methanol oxidation, including linear sweep voltammetry (LSV), electrochemical impedance spectroscopy (EIS), and chronoamperometry (CA). In the presence of 0.3 M methanol, the current densities of NiO−CuO and Ni0.95Cr0.05O2+δ thin films were found to be 12.2 mA·cm−2 and 6.5 mA·cm−2, respectively. The enhanced catalytic activity of NiO−CuO and Ni0.95Cr0.05O2+δ thin films may be a result of the synergistic effect between different metal oxides. The Chronoamperometry (CA) results of the mixed metal oxide thin films confirmed their stability in basic media. Furthermore, the findings of electrochemical impedance spectroscopy (EIS) of mixed metal oxide thin films demonstrated a lower charge transfer resistance as compared to the pure NiO, CuO, and Cr2O3 thin films.

Advanced processes for low-temperature formation of functional metal oxide based thin films

The analysis the discharge processes in magnetron plasma, target sputtering processes, as well as nucleation and formation of oxide thin films during dc magnetron sputtering is carried out. Particular attention is paid to the phenomenon of instabilities of the current-voltage characteristics of magnetron plasma during the sputtering of oxide targets, the processes of structural transformations of the surface of metal oxide targets under ion bombardment impact, and the mechanisms of low-temperature magnetron deposition of metal oxide thin films. Based on the results of the analysis performed the optimal routes for improving technologies for the low-temperature formation of transparent conductive oxide thin films have been discussed.

Novel synthesis approach for “stubborn” metals and metal oxides

Advances in physical vapor deposition techniques have led to a myriad of quantum materials and technological breakthroughs, affecting all areas of nanoscience and nanotechnology which rely on the innovation in synthesis. Despite this, one area that remains challenging is the synthesis of atomically precise complex metal oxide thin films and heterostructures containing “stubborn” elements that are not only nontrivial to evaporate/sublimate but also hard to oxidize. Here, we report a simple yet atomically controlled synthesis approach that bridges this gap. Using platinum and ruthenium as examples, we show that both the low vapor pressure and the difficulty in oxidizing a “stubborn” element can be addressed by using a solid metal-organic compound with significantly higher vapor pressure and with the added benefits of being in a preoxidized state along with excellent thermal and air stability. We demonstrate the synthesis of high-quality single crystalline, epitaxial Pt, and RuO2 films, resulting in a record high residual resistivity ratio (=27) in Pt films and low residual resistivity, ∼6 μΩ·cm, in RuO2 films. We further demonstrate, using SrRuO3 as an example, the viability of this approach for more complex materials with the same ease and control that has been largely responsible for the success of the molecular beam epitaxy of III-V semiconductors. Our approach is a major step forward in the synthesis science of “stubborn” materials, which have been of significant interest to the materials science and the condensed matter physics community.