Electrochemical Properties of Single Grain-Boundary and Pit Initiation Sites of Sensitized Stainless Steel

2017 ◽  
Keyword(s):  
Stainless Steel ◽  
Grain Boundary ◽  
Electrochemical Properties ◽  
Single Grain ◽  
Pit Initiation

Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer

2002 ◽  
Vol 715 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Jae-Hoon Lee ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Excimer Laser Annealing ◽  
Boundary Density ◽  
Single Grain

AbstractA short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.

Grain Boundary Atomic Structures in SrTiO3 and BaTiO3

2007 ◽  
Vol 558-559 ◽  
pp. 851-856 ◽  
Author(s):  
Takahisa Yamamoto ◽  
Teruyasu Mizoguchi ◽  
S.Y. Choi ◽  
Yukio Sato ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Annealing Temperature ◽  
Unit Length ◽  
Rate Dependency ◽  
Atomic Structures ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
Theoretical Results

SrTiO3 bicrystals with various types of grain boundaries were prepared by joining two single crystals at high temperature. By using the bicrystals, we examined their current-voltage characteristics across single grain boundaries from a viewpoint of point defect segregation in the vicinity of the grain boundaries. Current-voltage property in SrTiO3 bicrystals was confirmed to show a cooling rate dependency from annealing temperature, indicating that cation vacancies accumulate due to grain boundary oxidation. The theoretical results obtained by ab-initio calculation clearly showed that the formation energy of Sr vacancies is the lowest comparing with Ti and O vacancies in oxidized atomosphere. The formation of a double Schottky barrier (DSB) in n-type SrTiO3 is considered to be closely related to the accumulation of the charged Sr vacancies. Meanwhile, by using three types of low angle boundaries, the excess charges related to one grain boundary dislocation par unit length was estimated. In this study, we summarized our results obtained in our group.

Studies on grain boundary effects in spray deposited BICOVOX 0.1 films on platinum-coated stainless steel substrate

Ionics ◽  
2010 ◽  
Vol 17 (1) ◽  
pp. 69-74 ◽  
Author(s):  
Rajeev Joshi ◽  
Ratikant Mishra ◽  
C. A. Betty ◽  
Shilpa Sawant ◽  
S. H. Pawar
Keyword(s):  
Stainless Steel ◽  
Grain Boundary ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
Boundary Effects ◽  
Grain Boundary Effects

Arrest of weld-decay in 304 austenitic stainless steel by twin-induced grain boundary engineering

2007 ◽  
Vol 55 (16) ◽  
pp. 5401-5407 ◽  
Author(s):  
H. Kokawa ◽  
M. Shimada ◽  
M. Michiuchi ◽  
Z.J. Wang ◽  
Y.S. Sato
Keyword(s):  
Stainless Steel ◽  
Austenitic Stainless Steel ◽  
Grain Boundary ◽  
Grain Boundary Engineering ◽  
304 Austenitic Stainless Steel
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