scholarly journals Fabrication and Optoelectrical Properties of IZO/Cu2OHeterostructure Solar Cells by Thermal Oxidation

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Cheng-Chiang Chen ◽  
Lung-Chien Chen ◽  
Yi-Hsuan Lee

Indium zinc oxide (IZO)/cupper oxide (Cu2O) is a nontoxic nature and an attractive all-oxide candidate for low-cost photovoltaic (PV) applications. The present paper reports on the fabrication of IZO/Cu2O heterostructure solar cells which the Cu2O layers were prepared by oxidation of Cu thin films deposited on glass substrate. The measured parameters of cells were the short-circuit current (Isc), the open-circuit voltage (Voc), the maximum output power (Pm), the fill factor (FF), and the efficiency (η), which had values of 0.11 mA, 0.136 V, 5.05 μW, 0.338, and 0.56%, respectively, under AM 1.5 illumination.

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Kingsley O. Ukoba ◽  
Freddie L. Inambao ◽  
Andrew C. Eloka-Eboka

The need for affordable, clean, efficient, and sustainable solar cells informed this study. Metal oxide TiO2/NiO heterojunction solar cells were fabricated using the spray pyrolysis technique. The optoelectronic properties of the heterojunction were determined. The fabricated solar cells exhibit a short-circuit current of 16.8 mA, open-circuit voltage of 350 mV, fill factor of 0.39, and conversion efficiency of 2.30% under 100 mW/cm2 illumination. This study will help advance the course for the development of low-cost, environmentally friendly, and sustainable solar cell materials from metal oxides.


2012 ◽  
Vol 51 (10S) ◽  
pp. 10NF08 ◽  
Author(s):  
Takahiro Kato ◽  
Takuma Miyake ◽  
Daisuke Tashima ◽  
Tatsuya Sakoda ◽  
Masahisa Otsubo ◽  
...  

2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.


2021 ◽  
Vol 5 (3) ◽  
pp. 242-250
Author(s):  
D. Sergeyev ◽  
K. Shunkeyev ◽  
B. Kuatov ◽  
N. Zhanturina

In this paper, the features of the characteristics of model thin-film solar cells based on the non-toxic multicomponent compound CuZn2AlS4 (CZAS) are considered. The main parameters (open-circuit voltage, short-circuit current, fill factor, efficiency) and characteristics (quantum efficiency, current-voltage characteristic) of thin-film solar cells based on CZAS have been determined. The minimum optimal thickness of the CZAS absorber is found (1-1.25 microns). Deterioration of the performance of solar cells with an increase in operating temperature (280-400 K) is shown. It is revealed that in the wavelength range of 390-500 nm CZAS has a high external quantum efficiency, which allows its use in designs of multi-junction solar cells designed to absorb solar radiation in the specified range. It is shown that the combination of CZAS films with a buffer layer of non-toxic ZnS increases the performance of solar cells.


2011 ◽  
Vol 23 (40) ◽  
pp. 4636-4643 ◽  
Author(s):  
Zhicai He ◽  
Chengmei Zhong ◽  
Xun Huang ◽  
Wai-Yeung Wong ◽  
Hongbin Wu ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hwen-Fen Hong ◽  
Tsung-Shiew Huang ◽  
Wu-Yih Uen ◽  
Yen-Yeh Chen

We performed accelerated tests on sealed and nonsealed InGaP/InGaAs/Ge triple-junction (TJ) solar cells in a complex high temperature and high humidity environment and investigated the electrical properties over time. The degradation of energy conversion efficiency in nonsealed cells was found to be more serious than that in sealed cells. The short-circuit current (ISC), open-circuit voltage (VOC), and fill factor (FF) of sealed cells changed very slightly, though the conversion efficiency decreased 3.6% over 500 h of exposure. This decrease of conversion efficiency was suggested to be due to the deterioration of silicone encapsulant. TheISC,VOC, and FF of nonsealed cells decreased with increasing exposure time. By EL and SEM analysis, the root causes of degradation can be attributed to the damage and cracks near the edge of cells induced by the moisture ingress. It resulted in shunt paths that lead to a deterioration of the conversion efficiency of solar cell by increasing the leakage current, as well as decreasing open-circuit voltage and fill factor of nonsealed solar cells.


2019 ◽  
Vol 7 (45) ◽  
pp. 25978-25984 ◽  
Author(s):  
Guoming Qin ◽  
Lianjie Zhang ◽  
Dong Yuan ◽  
Haiying Jiang ◽  
Wei Tang ◽  
...  

A binary solvent approach simultaneously improves the open-circuit voltage, short-circuit current, and fill factor, and finally elevates the as-cast photovoltaic performance.


2012 ◽  
Vol 51 ◽  
pp. 10NF08
Author(s):  
Takahiro Kato ◽  
Takuma Miyake ◽  
Daisuke Tashima ◽  
Tatsuya Sakoda ◽  
Masahisa Otsubo ◽  
...  

2014 ◽  
Vol 783-786 ◽  
pp. 2022-2027 ◽  
Author(s):  
Masaharu Shiratani ◽  
Giichiro Uchida ◽  
Hyun Woong Seo ◽  
Daiki Ichida ◽  
Kazunori Koga ◽  
...  

We report characteristics of quantum dot (QD) sensitized solar cells using Si nanoparticles and Ge nanoparticles. Si nanoparticles were synthesized by multi-hollow discharge plasma chemical vapor deposition, whereas Ge nanoparticles were done by a radio frequency magnetron sputtering using Ar+H2under high pressure conditions. The electrical power generation from Si QDs and Ge QDs was confirmed. Si QD sensitized solar cells show an efficiency of 0.024%, fill factor of 0.32, short-circuit current of 0.75 mA/cm2and open-circuit voltage of 0.10 V, while Ge QD sensitized solar cells show an efficiency of 0.036%, fill factor of 0.38, short-circuit current of 0.64 mA/cm2and open-circuit voltage of 0.15 V.


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