Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS

2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Kingsley O. Ukoba ◽  
Freddie L. Inambao ◽  
Andrew C. Eloka-Eboka

The need for affordable, clean, efficient, and sustainable solar cells informed this study. Metal oxide TiO2/NiO heterojunction solar cells were fabricated using the spray pyrolysis technique. The optoelectronic properties of the heterojunction were determined. The fabricated solar cells exhibit a short-circuit current of 16.8 mA, open-circuit voltage of 350 mV, fill factor of 0.39, and conversion efficiency of 2.30% under 100 mW/cm2 illumination. This study will help advance the course for the development of low-cost, environmentally friendly, and sustainable solar cell materials from metal oxides.


2021 ◽  
Vol 5 (3) ◽  
pp. 242-250
Author(s):  
D. Sergeyev ◽  
K. Shunkeyev ◽  
B. Kuatov ◽  
N. Zhanturina

In this paper, the features of the characteristics of model thin-film solar cells based on the non-toxic multicomponent compound CuZn2AlS4 (CZAS) are considered. The main parameters (open-circuit voltage, short-circuit current, fill factor, efficiency) and characteristics (quantum efficiency, current-voltage characteristic) of thin-film solar cells based on CZAS have been determined. The minimum optimal thickness of the CZAS absorber is found (1-1.25 microns). Deterioration of the performance of solar cells with an increase in operating temperature (280-400 K) is shown. It is revealed that in the wavelength range of 390-500 nm CZAS has a high external quantum efficiency, which allows its use in designs of multi-junction solar cells designed to absorb solar radiation in the specified range. It is shown that the combination of CZAS films with a buffer layer of non-toxic ZnS increases the performance of solar cells.


2020 ◽  
Vol 6 ◽  
Author(s):  
Kawtar Belrhiti Alaoui ◽  
Saida Laalioui ◽  
Badr Ikken ◽  
Abdelkader Outzourhit

In this work, a detailed description of the various steps involved in the fabrication of high-efficiency hydrogenated amorphous-silicon cells using plasma-enhanced chemical vapor deposition, and a novel shadow masking technique is presented. The influence of the different masking methods on the cell parameters was experimentally investigated. Particularly, the short-circuit current density (Jsc), the fill factor, the open circuit voltage (Voc), and the resistive losses indicated by the shunt (Rsh) and series (Rs) resistances were measured in order to assess the performance of the cells as a function of the masks used during the cell fabrication process. The results indicate that the use of a masking technique where the p-i-n structure was first deposited over the whole surface of a 20 cm2 × 20 cm2 substrate, followed by the deposition, deposits the back contact through a metal mask, and by the ultrasonic soldering of indium to access the front contact is a good alternative to laser scribing in the laboratory scale. Indeed, a record efficiency of 8.8%, with a short-circuit current density (Jsc) of 15.6 mA/cm2, an open-circuit voltage (Voc) of 0.8 V, and a fill factor of 66.07% and low resistive losses were obtained by this technique. Furthermore, a spectroscopic ellipsometry investigation of the uniformity of the film properties (thickness, band gap, and refractive index) on large-area substrates, which is crucial to mini-module fabrication on a single substrate and for heterojunction development, was performed using the optimal cell deposition recipes. It was found that the relative variations of the band gap, thickness, and refractive index n are less than 1% suggesting that the samples are uniform over the 20 cm2 × 20 cm2 substrate area used in this work.


2011 ◽  
Vol 23 (40) ◽  
pp. 4636-4643 ◽  
Author(s):  
Zhicai He ◽  
Chengmei Zhong ◽  
Xun Huang ◽  
Wai-Yeung Wong ◽  
Hongbin Wu ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hwen-Fen Hong ◽  
Tsung-Shiew Huang ◽  
Wu-Yih Uen ◽  
Yen-Yeh Chen

We performed accelerated tests on sealed and nonsealed InGaP/InGaAs/Ge triple-junction (TJ) solar cells in a complex high temperature and high humidity environment and investigated the electrical properties over time. The degradation of energy conversion efficiency in nonsealed cells was found to be more serious than that in sealed cells. The short-circuit current (ISC), open-circuit voltage (VOC), and fill factor (FF) of sealed cells changed very slightly, though the conversion efficiency decreased 3.6% over 500 h of exposure. This decrease of conversion efficiency was suggested to be due to the deterioration of silicone encapsulant. TheISC,VOC, and FF of nonsealed cells decreased with increasing exposure time. By EL and SEM analysis, the root causes of degradation can be attributed to the damage and cracks near the edge of cells induced by the moisture ingress. It resulted in shunt paths that lead to a deterioration of the conversion efficiency of solar cell by increasing the leakage current, as well as decreasing open-circuit voltage and fill factor of nonsealed solar cells.


1986 ◽  
Vol 70 ◽  
Author(s):  
S. Yamazaki ◽  
M. Abe ◽  
S. Nagayama ◽  
K. Shibata ◽  
M. Susukida ◽  
...  

ABSTRACTPIN-structure small-area solar cells using a-Si have been frequently reported on, but only a few reports are available on the study of solar cells using a large-area (10-cm square) substrate, all with a resultant conversion efficiency of above 9.0 %[1,2]. Our study has been concentrated on solar cells using a batch of ten 10-cm square substrates with an average conversion efficiency of 9.5 % or more.As a result, without an anti-reflection coating on the surface of the glass substrate, the following values have been obtained: average conversion efficiency (EFF)=9.63 % (standard deviation of 0.195 %) -Open-circuit voltage (Voc)=12.668 V (standard deviation of 0.215 V) -Short-circuit current (Isc)=78.467 mA (standard deviation of 1.619 mA) -Fill factor (FF)=0.6672 (standard deviation of 0.009)The process, equipment and methods for measurements through which these results were obtained are described below.


2019 ◽  
Vol 7 (45) ◽  
pp. 25978-25984 ◽  
Author(s):  
Guoming Qin ◽  
Lianjie Zhang ◽  
Dong Yuan ◽  
Haiying Jiang ◽  
Wei Tang ◽  
...  

A binary solvent approach simultaneously improves the open-circuit voltage, short-circuit current, and fill factor, and finally elevates the as-cast photovoltaic performance.


2014 ◽  
Vol 783-786 ◽  
pp. 2022-2027 ◽  
Author(s):  
Masaharu Shiratani ◽  
Giichiro Uchida ◽  
Hyun Woong Seo ◽  
Daiki Ichida ◽  
Kazunori Koga ◽  
...  

We report characteristics of quantum dot (QD) sensitized solar cells using Si nanoparticles and Ge nanoparticles. Si nanoparticles were synthesized by multi-hollow discharge plasma chemical vapor deposition, whereas Ge nanoparticles were done by a radio frequency magnetron sputtering using Ar+H2under high pressure conditions. The electrical power generation from Si QDs and Ge QDs was confirmed. Si QD sensitized solar cells show an efficiency of 0.024%, fill factor of 0.32, short-circuit current of 0.75 mA/cm2and open-circuit voltage of 0.10 V, while Ge QD sensitized solar cells show an efficiency of 0.036%, fill factor of 0.38, short-circuit current of 0.64 mA/cm2and open-circuit voltage of 0.15 V.


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