Wavelength Width Dependence of Cavity Temperature Distribution in Semiconductor Diode Laser

The study of heat distribution in laser diode shows that there is nonuniform temperature distribution in cavity length of laser diode. In this paper, we investigate the temperature difference in laser diode cavity length and its effect on laser bar output wavelength width that mounted on usual CS model. In this survey at the first, laser was simulated then the simulations result was compared with experimental test result. The result shows that for each emitter there is difference, about 2.5 degree between the beginning and end of cavity.

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Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088567 ◽

1991 ◽

Vol 49 ◽

pp. 850-851

Author(s):

F. A. Ponce ◽

R. L. Thornton ◽

G. B. Anderson

Keyword(s):

Semiconductor Lasers ◽

Wide Bandgap ◽

Semiconductor Diode ◽

Visible Range ◽

P System ◽

Misfit Dislocations ◽

Lattice Match ◽

Semiconductor Diode Laser ◽

Thin Film Semiconductors ◽

Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

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Preliminary Study of the Application of Semiconductor Diode Laser in Controlling Locusts

2008 Second International Symposium on Intelligent Information Technology Application ◽

10.1109/iita.2008.449 ◽

2008 ◽

Author(s):

Mingyin Yao ◽

Qiang Zhou ◽

Muhua Liu ◽

Jinhui Zhao

Keyword(s):

Diode Laser ◽

Semiconductor Diode ◽

Semiconductor Diode Laser ◽

Preliminary Study

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Investigation of the light field of a semiconductor diode laser

Optics Express ◽

10.1364/oe.22.026438 ◽

2014 ◽

Vol 22 (21) ◽

pp. 26438 ◽

Cited By ~ 5

Author(s):

A. V. Ankudinov ◽

M. L. Yanul ◽

S. O. Slipchenko ◽

A. V. Shelaev ◽

P. S. Dorozhkin ◽

...

Keyword(s):

Diode Laser ◽

Light Field ◽

Semiconductor Diode ◽

Semiconductor Diode Laser

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A new method for membrane manufacturing from polyamide with semiconductor diode laser

Journal of Membrane Science ◽

10.1016/j.memsci.2021.119807 ◽

2022 ◽

Vol 641 ◽

pp. 119807

Author(s):

Baris Polat ◽

Yasin Ozay ◽

Ibrahim Kucukkara ◽

Nadir Dizge

Keyword(s):

Diode Laser ◽

New Method ◽

Semiconductor Diode ◽

Semiconductor Diode Laser

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Transscleral Contact Retinal Photocoagulation With an 810nm Semiconductor Diode Laser

Ophthalmic Surgery Lasers and Imaging Retina ◽

10.3928/1542-8877-19900701-09 ◽

1990 ◽

Vol 21 (7) ◽

pp. 492-496

Author(s):

Tom Jennings ◽

Terry Fuller ◽

John A Vukich ◽

Tim T Lam ◽

Brian C Joondeph ◽

...

Keyword(s):

Diode Laser ◽

Semiconductor Diode ◽

Semiconductor Diode Laser ◽

Retinal Photocoagulation

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Temperaturverteilung beim Wälzschälen/Temperature distribution during power skiving

wt Werkstattstechnik online ◽

10.37544/1436-4980-2021-11-12-16 ◽

2021 ◽

Vol 111 (11-12) ◽

pp. 786-791

Author(s):

Florian Sauer ◽

Michael Gerstenmeyer ◽

Volker Schulze

Keyword(s):

Temperature Distribution ◽

Wear Mechanisms ◽

Experimental Temperature ◽

Heat Distribution ◽

Temperature Analysis ◽

Power Skiving ◽

Underlying Mechanisms

Innenverzahnungen, die aufgrund der Elektromobilität zunehmend im Fokus stehen, lassen sich mithilfe des Wälzschälens produktiv herstellen. Um diese Produktivität weiter zu steigern, müssen die wirkenden Verschleißmechanismen untersucht und verstanden werden. Der Beitrag behandelt die experimentelle Temperaturuntersuchung des Wälzschälens mit anschließender Modellierung der Wärmeverteilung, welche als erster Schritt zum Mechanismenverständnis angesehen werden kann.   Internal gears, which are increasingly in focus due to electromobility, can be manufactured productively with the help of power skiving. In order to further increase the productivity, the wear mechanisms have to be investigated and understood. This paper discusses the experimental temperature analysis of power skiving by subsequently modelling the heat distribution. This process can be seen as a first step towards understanding the underlying mechanisms.

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