GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing
Keyword(s):
By using a homojunction-structured GaP single crystal, we generated a photon energy higher than the bandgap energy (2.26 eV). The device was fabricated by performing dressed-photon-phonon- (DPP-) assisted annealing, while applying a forward-bias current, on a p-n homojunction structure formed by implanting a dopant (Zn) into an n-type GaP substrate. The DPP-assisted annealing increased the light emission intensity in an energy band above 2.32 eV by at least 550% compared with that before annealing.
2011 ◽
Vol 18
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pp. 1651-1657
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2007 ◽
Vol 46
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pp. 2474-2480
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2006 ◽
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pp. 81-82
1999 ◽
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pp. 940-945
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2005 ◽
Vol 2005
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pp. 83-84