scholarly journals Prediction of surface leakage current of overhead insulators under environmental and electrical stresses

2020 ◽  
Vol 9 (5) ◽  
pp. 1747-1754
Author(s):  
F. S. Abdullah ◽  
M. A. M. Piah ◽  
N. A. Othman ◽  
A. Din

Leakage current is one of the critical aspects to consider for overhead transmission line insulator’s condition and performance assessment. As the leakage current increase, the size of the dry band also will increase leads to the dry band arcing, deteriorate the insulator performance and contribute to the development of insulator flashover. Based on the literature study, other than the existence of contaminations on the surface of insulator combined with moisture, the variation in leakage current is also affected by the environmental and electrical stresses. Previous researches have shown the effect of environmental and electrical stresses on surface leakage current based on experimental and simulation results. This paper outlines an analytical approach based on dimensional analysis to propose a new mathematical model of leakage current under environmental and electrical stresses. To justify the applicability of the derived dimensional model, the new model has been validated using previous researcher’s experimental results. The validation indicated that the proposed model had shown a good agreement with the previous experimental results. The proposed dimensional equation for this research work can be potentially used as a predictive performance model to evaluate and monitor the leakage current and insulator’s performance

2011 ◽  
Vol 20 (03) ◽  
pp. 557-564
Author(s):  
G. R. SAVICH ◽  
J. R. PEDRAZZANI ◽  
S. MAIMON ◽  
G. W. WICKS

Tunneling currents and surface leakage currents are both contributors to the overall dark current which limits many semiconductor devices. Surface leakage current is generally controlled by applying a post-epitaxial passivation layer; however, surface passivation is often expensive and ineffective. Band-to-band and trap assisted tunneling currents cannot be controlled through surface passivants, thus an alternative means of control is necessary. Unipolar barriers, when appropriately applied to standard electronic device structures, can reduce the effects of both surface leakage and tunneling currents more easily and cost effectively than other methods, including surface passivation. Unipolar barriers are applied to the p -type region of a conventional, MBE grown, InAs based pn junction structures resulting in a reduction of surface leakage current. Placing the unipolar barrier in the n -type region of the device, has the added benefit of reducing trap assisted tunneling current as well as surface leakage currents. Conventional, InAs pn junctions are shown to exhibit surface leakage current while unipolar barrier photodiodes show no detectable surface currents.


2002 ◽  
Vol 229 (1) ◽  
pp. 79-82
Author(s):  
Y.J. Choi ◽  
K.N. Oh ◽  
I.J. Kim ◽  
Y.H. Kim ◽  
Y. Yi ◽  
...  

2014 ◽  
Vol 104 (15) ◽  
pp. 153509 ◽  
Author(s):  
YongHe Chen ◽  
Kai Zhang ◽  
MengYi Cao ◽  
ShengLei Zhao ◽  
JinCheng Zhang ◽  
...  

1954 ◽  
Vol 25 (11) ◽  
pp. 1440-1441 ◽  
Author(s):  
Melvin Cutler ◽  
Hubert M. Bath

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