scholarly journals Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors

Optics ◽  
2018 ◽  
Vol 7 (1) ◽  
pp. 38
Author(s):  
Kathy Kyaw Min
Keyword(s):  
Temperature Dependence ◽  
Lifetime Measurement ◽  
Carrier Relaxation

Temperature dependence of carrier relaxation in semiconductor doped glasses

1995 ◽  
Vol 51 (4) ◽  
pp. 2180-2187 ◽  
Author(s):  
G. Beadie ◽  
E. Sauvain ◽  
A. S. L. Gomes ◽  
N. M. Lawandy
Keyword(s):  
Temperature Dependence ◽  
Carrier Relaxation ◽  
Doped Glasses

Temperature dependence of the picosecond carrier relaxation in silicon‐irradiated silicon‐on‐sapphire films

1987 ◽  
Vol 62 (5) ◽  
pp. 1850-1855 ◽  
Author(s):  
Th. Pfeiffer ◽  
J. Kuhl ◽  
E. O. Göbel ◽  
L. Palmetshofer
Keyword(s):  
Temperature Dependence ◽  
Carrier Relaxation

Temperature dependence of hot-carrier relaxation in PbSe nanocrystals: Anab initiostudy

2009 ◽  
Vol 79 (23) ◽  
Author(s):  
Hua Bao ◽  
Bradley F. Habenicht ◽  
Oleg V. Prezhdo ◽  
Xiulin Ruan
Keyword(s):  
Temperature Dependence ◽  
Carrier Relaxation ◽  
Hot Carrier

Study of the Temperature Dependence of E2 and A1(LO) Modes in ZnO

2006 ◽  
Vol 957 ◽  
Author(s):  
Esther Alarcon-Llado ◽  
Ramon Cusco ◽  
Jordi Ibanez ◽  
Luis Artus ◽  
Juan Jimenez ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Fermi Resonance ◽  
Bulk Single Crystal ◽  
Temperature Dependent ◽  
Resonance Model ◽  
Carrier Relaxation ◽  
Relevant Role ◽  
Order Of Magnitude ◽  
Anharmonic Decay ◽  
The Continuum

ABSTRACTRaman scattering measurements were carried out on a bulk, single crystal of wurtzite ZnO over a temperature range from 80 to 760 K and the temperature-dependent shift and broadening of the E2high and A1(LO) modes was analyzed. The E2high mode exhibits a visibly asymmetric line shape that can be related to the interaction with the continuum of acoustic two-phonon density of states. A Fermi resonance model was used to describe the E2high temperature dependence. On the other hand, the anharmonic shift and broadening of the A1(LO) mode are adequately accounted for by a decay model with a dominating Ridley channel involving TO and LA modes. Phonon lifetimes of ∼0.9 and 0.5 ps are found for the E2high and A1(LO) modes, respectively, which corroborates that anharmonic decay involves in both cases a three-phonon process. The A1(LO)lifetime is one order of magnitude lower than that of GaN, which suggests that hot phonon effects should be expected to play a less relevant role in carrier relaxation in ZnO as compared with GaN.

Temperature dependence of hot carrier relaxation in PbSe nanocrystals: an ab initio study

2009 ◽  
Author(s):  
Hua Bao ◽  
Bradley F. Habenicht ◽  
Oleg V. Prezhdo ◽  
Xiulin Ruan ◽  
Xianfan Xu
Keyword(s):  
Ab Initio ◽  
Temperature Dependence ◽  
Ab Initio Study ◽  
Carrier Relaxation ◽  
Hot Carrier

Temperature Dependence of Alfvén-Wave Amplitudes and Carrier Relaxation Times in Bismuth

1972 ◽  
Vol 6 (2) ◽  
pp. 327-333 ◽  
Author(s):  
F. C. Chen ◽  
Jay Kirschenbaum ◽  
Y. H. Kao
Keyword(s):  
Temperature Dependence ◽  
Relaxation Times ◽  
Alfven Wave ◽  
Carrier Relaxation
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