Fabrication and Characterization of Alloy Microelectrode by Electrochemical Etching Method

2012 ◽  
Vol 10 (1) ◽  
pp. 304-307
Author(s):  
Wen Li ◽  
Yanzhao Li ◽  
Pei Jiang ◽  
Lijian Xu ◽  
Shunqin Hu ◽  
...  
Author(s):  
Hasan A. Hadi ◽  
Raid A. Ismail ◽  
Nadir F. Habubi

Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20 mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten point height was 317 nm. The average of pores diameter was 419.98nm, and the grain growth is columnar with a (211) preferred orientation. The grain size of the PS was estimated from the Scherer’s formula and found to be 73 nm. All the properties of the porous silicon layer, such as porosity and the thickness depend on the anodization parameters. The porosity (P) was approximately 77%. The thickness of the layer formed during an anodization in constant current was 3.54 nm in gravimetric method, while its value was 1.77 nm by using the theoretical relation.


2015 ◽  
Vol 66 (6) ◽  
pp. 27-38 ◽  
Author(s):  
S. Nohren ◽  
E. Quiroga-Gonzalez ◽  
J. Carstensen ◽  
H. Foll

2019 ◽  
Vol 35 (4) ◽  
pp. 475-484
Author(s):  
SHIVA ARUN ◽  
◽  
PRABHA BHARTIYA ◽  
AMREEN NAZ ◽  
SUDHEER RAI ◽  
...  

2019 ◽  
Vol 139 (11) ◽  
pp. 375-380
Author(s):  
Harutoshi Takahashi ◽  
Yuta Namba ◽  
Takashi Abe ◽  
Masayuki Sohgawa

2015 ◽  
Vol 135 (11) ◽  
pp. 474-475
Author(s):  
Koji Sugano ◽  
Ryoji Hiraoka ◽  
Toshiyuki Tsuchiya ◽  
Osamu Tabata

Author(s):  
Alan Huffman ◽  
John Lannon ◽  
Matthew Lueck ◽  
Christopher Gregory ◽  
Dorota Temple

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