ABSTRACTSynchrotron white beam x-ray topography techniques, in section and large-area transmission modes, have been applied to the evaluation of ELOG GaN on A12O3. Using the openings in 100 nm thick SiO2 windows, a new GaN growth took place, which resulted in typical overgrowth thicknesses of 6.8 μm. Measurements on the recorded Laue patterns indicate that the misorientation of GaN with respect to the sapphire substrate (excluding a 30° rotation between them) varies considerably along various crystalline directions, reaching a maximum of a ∼0.66° rotation of the (0001) plane about the [01•1] axis. This is ∼3% smaller than the misorientation measured in the non-ELOG reference, which reached a maximum of 0.68°. This misorientation varies measurably as the stripe or window dimensions are changed. The quality of the ELOG epilayers is improved when compared to the non- ELOG samples, though some local deviations from lattice coherence were observed. Long range and large-scale (order of 100 μm long) strain structures were observed in all multi quantum well epilayers.
Surface emitting 15 µm multi-quantum well LED on epitaxial lateral overgrowth InP/Si