Crystallographic Wet Chemical Etching of Semipolar GaN (11–22) Grown on m-Plane Sapphire Substrates

2015 ◽  
Vol 15 (7) ◽  
pp. 5250-5254 ◽  
Author(s):  
Jae-Kwan Kim ◽  
Sung Nam Lee ◽  
Keun-Man Song ◽  
Jae-Sik Yoon ◽  
Ji-Myon Lee
Keyword(s):  
Chemical Etching ◽  
Sapphire Substrates ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Semipolar Gan

Investigation of characteristics of laterally overgrown GaN on striped sapphire substrates patterned by wet chemical etching

2006 ◽  
Vol 290 (2) ◽  
pp. 398-404 ◽  
Author(s):  
Jing Wang ◽  
L.W. Guo ◽  
H.Q. Jia ◽  
Z.G. Xing ◽  
Y. Wang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Sapphire Substrates ◽  
Wet Chemical ◽  
Wet Chemical Etching

Growth of low-defect AlGaN by lateral epitaxy over V-grooved sapphire substrates fabricated by wet chemical etching

2006 ◽  
Author(s):  
H. S. Cheong ◽  
E. M. Park ◽  
H. Y. Kim ◽  
Y. S. Lee ◽  
C.-H. Hong ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Sapphire Substrates ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Lateral Epitaxy

Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching

2006 ◽  
Vol 23 (8) ◽  
pp. 2243-2246 ◽  
Author(s):  
Yu Nai-Sen ◽  
Guo Li-Wei ◽  
Chen Hong ◽  
Xing Zhi-Gang ◽  
Wang Jing ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Sapphire Substrates ◽  
Near Ultraviolet ◽  
Wet Chemical ◽  
Wet Chemical Etching

Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

2010 ◽  
Vol 96 (23) ◽  
pp. 231918 ◽  
Author(s):  
P. de Mierry ◽  
N. Kriouche ◽  
M. Nemoz ◽  
S. Chenot ◽  
G. Nataf
Keyword(s):  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Semipolar Gan

Investigation on Dislocations in C-Plane Electron-Irradiated GaN Epilayers by Wet Chemical Etching

2011 ◽  
Vol 335-336 ◽  
pp. 531-534
Author(s):  
Yuan Tian ◽  
Li Min Liang ◽  
Wen Cheng Wu ◽  
Qiu Yan Hao ◽  
Cai Chi Liu
Keyword(s):  
Thermal Annealing ◽  
Chemical Etching ◽  
Experimental Results ◽  
Epitaxial Layers ◽  
Threading Dislocations ◽  
Sem Images ◽  
Sapphire Substrates ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Good Agreement

The dislocations in electron-irradiated c-plane n-GaN epitaxial layers grown on c-plane sapphire substrates by MOCVD were revealed by several different wet chemical etching methods. And the defect-selective etching method combined with SEM was carried out to study the mechanism of dislocations generation of GaN. SEM images of GaN epilayers with several individual methods are in good agreement with each other. Among all the defects, threading dislocations (TDs) dominated in the GaN epilayers and these defects could be divided into three types. In addition, the EPDs after annealing at various temperatures were studied. The experimental results showed that suitable thermal annealing can eliminate some dislocations.

Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost-Competitive Light Emitters

2013 ◽  
Vol 25 (32) ◽  
pp. 4470-4476 ◽  
Author(s):  
Sungmin Jung ◽  
Ki-Ryong Song ◽  
Sung-Nam Lee ◽  
Hyunsoo Kim
Keyword(s):  
Chemical Etching ◽  
Light Emitters ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Semipolar Gan
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