Growth of low-defect AlGaN by lateral epitaxy over V-grooved sapphire substrates fabricated by wet chemical etching

The dislocations in electron-irradiated c-plane n-GaN epitaxial layers grown on c-plane sapphire substrates by MOCVD were revealed by several different wet chemical etching methods. And the defect-selective etching method combined with SEM was carried out to study the mechanism of dislocations generation of GaN. SEM images of GaN epilayers with several individual methods are in good agreement with each other. Among all the defects, threading dislocations (TDs) dominated in the GaN epilayers and these defects could be divided into three types. In addition, the EPDs after annealing at various temperatures were studied. The experimental results showed that suitable thermal annealing can eliminate some dislocations.

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Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2006.03.055 ◽

2007 ◽

Vol 428 (1-2) ◽

pp. 312-315 ◽

Cited By ~ 8

Author(s):

N.S. Yu ◽

L.W. Guo ◽

H. Chen ◽

Z.G. Xing ◽

B.H. Ge ◽

...

Keyword(s):

Chemical Etching ◽

Sapphire Substrates ◽

Near Ultraviolet ◽

Wet Chemical ◽

Wet Chemical Etching

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Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching

Nanotechnology ◽

10.1088/0957-4484/24/33/335301 ◽

2013 ◽

Vol 24 (33) ◽

pp. 335301 ◽

Cited By ~ 21

Author(s):

Chong Geng ◽

Lu Zheng ◽

Huajing Fang ◽

Qingfeng Yan ◽

Tongbo Wei ◽

...

Keyword(s):

Self Assembly ◽

Chemical Etching ◽

Sapphire Substrates ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Patterned Sapphire Substrates

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Decapsulation Techniques for Cu Wire Bonding Package

ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2009p0217 ◽

2009 ◽

Author(s):

Dongmei Meng ◽

Joe Rupley ◽

Chris McMahon

Keyword(s):

Laser Ablation ◽

Thin Layer ◽

Chemical Etching ◽

Wire Bonding ◽

Methods And Techniques ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Reliability Issue ◽

Etch Time ◽

Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

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