scholarly journals Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer

2013 ◽  
Vol 8 (1) ◽  
Author(s):  
Sannian Song ◽  
Zhitang Song ◽  
Cheng Peng ◽  
Lina Gao ◽  
Yifeng Gu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Buffer Layer ◽  
Performance Improvement ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Tio2 Buffer Layer ◽  
Change Memory

scholarly journals Atomic layer deposition and tellurization of Ge–Sb film for phase-change memory applications

RSC Advances ◽  
2019 ◽  
Vol 9 (30) ◽  
pp. 17291-17298 ◽  
Author(s):  
Yewon Kim ◽  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jeeyoon Shin ◽  
Seongyoon Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Phase Change Memory ◽  
Atomic Layer ◽  
Gap Filling ◽  
Layer Deposition ◽  
Memory Applications ◽  
Change Memory

We studied the atomic layer deposition (ALD) and the tellurization of Ge–Sb films to prepare conformal crystalline Ge–Sb–Te (GST) films and to achieve void-free gap filling for emerging phase-change memory applications.

Performance Improvement of Phase Change Memory Cell by Using a Tantalum Pentoxide Buffer Layer

2016 ◽  
Vol 848 ◽  
pp. 425-429
Author(s):  
Zhong Hua Zhang ◽  
San Nian Song ◽  
Zhi Tang Song ◽  
Le Li ◽  
Lan Lan Shen ◽  
...  
Keyword(s):  
Phase Change ◽  
Buffer Layer ◽  
Performance Improvement ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Tantalum Pentoxide ◽  
Reset Voltage ◽  
Clad Layer ◽  
Improved Performance ◽  
Change Memory

The performance of phase change memory (PCM) cell, based on Ti0.5Sb2Te3, was significantly improved by using a tantalum dioxide buffer layer. The presence of a buffer layer reduced the reset voltage of the PCM cell. The theoretical thermal simulation and calculation for the reset process were conducted to analyze the thermal effect of the titanium dioxide heating layer. The improved performance of the PCM cell with dioxide clad layer can be attributed to the fact that the buffer layer not only acted as heating layer but also efficiently reduced the cell dissipated power.

Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory

2019 ◽  
Vol 31 (21) ◽  
pp. 8752-8763 ◽  
Author(s):  
Eui-Sang Park ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Manick Ha ◽  
Jeong Woo Jeon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Phase Change Memory ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Change Memory

Performance improvement of phase change memory cell by using a cerium dioxide buffer layer

2010 ◽  
Vol 96 (20) ◽  
pp. 203504 ◽  
Author(s):  
Fei Shang ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
Zhitang Song ◽  
Changzhou Wang
Keyword(s):  
Phase Change ◽  
Buffer Layer ◽  
Performance Improvement ◽  
Cerium Dioxide ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Change Memory

Developing Precursor Chemistry for Atomic Layer Deposition of High-Density, Conformal GeTe Films for Phase-Change Memory

2019 ◽  
Vol 31 (21) ◽  
pp. 8663-8672 ◽  
Author(s):  
Eui-Sang Park ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Manick Ha ◽  
Jeong Woo Jeon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Phase Change Memory ◽  
Atomic Layer ◽  
Precursor Chemistry ◽  
High Density ◽  
Layer Deposition ◽  
Change Memory

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films

2010 ◽  
Vol 99 (4) ◽  
pp. 767-770 ◽  
Author(s):  
Sannian Song ◽  
Zhitang Song ◽  
Bo Liu ◽  
Liangcai Wu ◽  
Songlin Feng
Keyword(s):  
Phase Change ◽  
Performance Improvement ◽  
Composite Films ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Change Memory

Performance improvement of phase-change memory cell with cup-shaped bottom electrode contact

2008 ◽  
Vol 93 (10) ◽  
pp. 103107 ◽  
Author(s):  
L. C. Wu ◽  
Z. T. Song ◽  
F. Rao ◽  
Y. F. Gong ◽  
B. Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
Performance Improvement ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Electrode Contact ◽  
Change Memory

Study of phase change memory cell with inserting buffer layer

2010 ◽  
pp. NA-NA
Author(s):  
Liangcai Wu ◽  
Xilin Zhou ◽  
Zhitang Song ◽  
Yan Liu ◽  
Henan Ni ◽  
...  
Keyword(s):  
Phase Change ◽  
Buffer Layer ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Change Memory
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