Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application

2015 ◽  
Vol 27 (10) ◽  
pp. 3707-3713 ◽  
Author(s):  
Taeyong Eom ◽  
Taehong Gwon ◽  
Sijung Yoo ◽  
Byung Joon Choi ◽  
Moo-Sung Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Ligand Exchange ◽  
Phase Change Memory ◽  
Atomic Layer ◽  
Substitution Reactions ◽  
Layer Deposition ◽  
Change Memory

scholarly journals Atomic layer deposition and tellurization of Ge–Sb film for phase-change memory applications

RSC Advances ◽  
2019 ◽  
Vol 9 (30) ◽  
pp. 17291-17298 ◽  
Author(s):  
Yewon Kim ◽  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jeeyoon Shin ◽  
Seongyoon Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Phase Change Memory ◽  
Atomic Layer ◽  
Gap Filling ◽  
Layer Deposition ◽  
Memory Applications ◽  
Change Memory

We studied the atomic layer deposition (ALD) and the tellurization of Ge–Sb films to prepare conformal crystalline Ge–Sb–Te (GST) films and to achieve void-free gap filling for emerging phase-change memory applications.

Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory

2019 ◽  
Vol 31 (21) ◽  
pp. 8752-8763 ◽  
Author(s):  
Eui-Sang Park ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Manick Ha ◽  
Jeong Woo Jeon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Phase Change Memory ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Change Memory

Developing Precursor Chemistry for Atomic Layer Deposition of High-Density, Conformal GeTe Films for Phase-Change Memory

2019 ◽  
Vol 31 (21) ◽  
pp. 8663-8672 ◽  
Author(s):  
Eui-Sang Park ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Manick Ha ◽  
Jeong Woo Jeon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Phase Change Memory ◽  
Atomic Layer ◽  
Precursor Chemistry ◽  
High Density ◽  
Layer Deposition ◽  
Change Memory

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

Improved thermal energy storage of nanoencapsulated phase change materials by atomic layer deposition

2020 ◽  
Vol 206 ◽  
pp. 110322 ◽  
Author(s):  
Nuria Navarrete ◽  
Damiano La Zara ◽  
Aristeidis Goulas ◽  
David Valdesueiro ◽  
Leonor Hernández ◽  
...  
Keyword(s):  
Energy Storage ◽  
Atomic Layer Deposition ◽  
Phase Change ◽  
Thermal Energy ◽  
Thermal Energy Storage ◽  
Phase Change Materials ◽  
Atomic Layer ◽  
Layer Deposition

Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

2019 ◽  
Vol 31 (8) ◽  
pp. 5833-5837
Author(s):  
Hao Wang ◽  
Sannian Song ◽  
Zhitang Song ◽  
Zhiguo Zhou ◽  
Dongning Yao ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Phase Change Materials ◽  
Atomic Layer ◽  
Layer Deposition

Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition

2016 ◽  
Author(s):  
Sannian Song ◽  
Lanlan Shen ◽  
Zhitang Song ◽  
Dongning Yao ◽  
Tianqi Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Phase Change ◽  
Atomic Layer ◽  
Layer Deposition
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