Developing Precursor Chemistry for Atomic Layer Deposition of High-Density, Conformal GeTe Films for Phase-Change Memory

2019 ◽  
Vol 31 (21) ◽  
pp. 8663-8672 ◽  
Author(s):  
Eui-Sang Park ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Manick Ha ◽  
Jeong Woo Jeon ◽  
...  
RSC Advances ◽  
2019 ◽  
Vol 9 (30) ◽  
pp. 17291-17298 ◽  
Author(s):  
Yewon Kim ◽  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jeeyoon Shin ◽  
Seongyoon Kim ◽  
...  

We studied the atomic layer deposition (ALD) and the tellurization of Ge–Sb films to prepare conformal crystalline Ge–Sb–Te (GST) films and to achieve void-free gap filling for emerging phase-change memory applications.


2019 ◽  
Vol 31 (21) ◽  
pp. 8752-8763 ◽  
Author(s):  
Eui-Sang Park ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Manick Ha ◽  
Jeong Woo Jeon ◽  
...  

Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...


2011 ◽  
Vol 50 (9S1) ◽  
pp. 09MD04 ◽  
Author(s):  
Lei Wang ◽  
C. David Wright ◽  
Purav Shah ◽  
Mustafa M. Aziz ◽  
Abu Sebastian ◽  
...  

2012 ◽  
Vol 12 (10) ◽  
pp. 7939-7943
Author(s):  
Yan Liu ◽  
Zhitang Song ◽  
Bo Liu ◽  
Jia Xu ◽  
Houpeng Chen ◽  
...  

2020 ◽  
Vol 464 ◽  
pp. 125544
Author(s):  
Yabing Wang ◽  
Yanli Li ◽  
Shangkun Shao ◽  
Xiaoyun Zhang ◽  
Yufei Li ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document