scholarly journals Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

2014 ◽  
Vol 9 (1) ◽  
pp. 505 ◽  
Author(s):  
Chia-Yu Lee ◽  
An-Jye Tzou ◽  
Bing-Cheng Lin ◽  
Yu-Pin Lan ◽  
Ching-Hsueh Chiu ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Efficiency Improvement ◽  
Nucleation Layer ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Reactive Plasma ◽  
Ultraviolet Light Emitting Diodes

Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 56 (6) ◽  
pp. 060001
Author(s):  
田康凯 Tian Kangkai ◽  
楚春双 Chu Chunshuang ◽  
毕文刚 Bi Wengang ◽  
张勇辉 Zhang Yonghui ◽  
张紫辉 Zhang Zihui
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Efficiency Improvement ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

GaN-Based Ultraviolet Light Emitting Diodes With Ex Situ Sputtered AlN Nucleation Layer

2013 ◽  
Vol 9 (11) ◽  
pp. 895-899 ◽  
Author(s):  
W. C. Lai ◽  
C. H. Yen ◽  
Y. Y. Yang ◽  
C. K. Wang ◽  
S. J. Chang
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Nucleation Layer ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes
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