Highly Efficient InGaN-Based 383-nm Ultraviolet Light-Emitting Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown AlN Buffer

2008 ◽  
Vol 1 ◽  
pp. 101101 ◽  
Author(s):  
Yasuo Ohba ◽  
Kei Kaneko ◽  
Hiroshi Katsuno ◽  
Mitsuhiro Kushibe
Keyword(s):  
High Temperature ◽  
Ultraviolet Light ◽  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Highly Efficient ◽  
Aln Buffer ◽  
Ultraviolet Light Emitting Diodes

The sapphire substrate pretreatment effects on high-temperature annealed AlN templates in deep ultraviolet light emitting diodes

CrystEngComm ◽  
2019 ◽  
Vol 21 (31) ◽  
pp. 4632-4636 ◽  
Author(s):  
M. X. Wang ◽  
F. J. Xu ◽  
J. M. Wang ◽  
N. Xie ◽  
Y. H. Sun ◽  
...  
Keyword(s):  
High Temperature ◽  
Ultraviolet Light ◽  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Crystalline Quality ◽  
Light Emitting ◽  
Pretreatment Effects ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Evolution of crystalline quality of AlN via high-temperature (HT) annealing induced by different sapphire pretreatments is investigated.

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Optimization of structure parameters for highly efficient AlGaN based deep ultraviolet light emitting diodes

2017 ◽  
Vol 112 ◽  
pp. 339-352 ◽  
Author(s):  
Ramit Kumar Mondal ◽  
Vijay Chatterjee ◽  
Sumitra Singh ◽  
Sk Masiul Islam ◽  
Suchandan Pal
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Structure Parameters ◽  
Light Emitting ◽  
Highly Efficient ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

2019 ◽  
Vol 114 (9) ◽  
pp. 091107 ◽  
Author(s):  
Hongliang Chang ◽  
Zhaolong Chen ◽  
Weijiang Li ◽  
Jianchang Yan ◽  
Rui Hou ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Van Der Waals ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Aln Film ◽  
Ultraviolet Light Emitting Diodes

Sapphire substrate sidewall shaping of deep ultraviolet light-emitting diodes by picosecond laser multiple scribing

2017 ◽  
Vol 10 (6) ◽  
pp. 062101 ◽  
Author(s):  
Yanan Guo ◽  
Yun Zhang ◽  
Jianchang Yan ◽  
Xiang Chen ◽  
Shuo Zhang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Picosecond Laser ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes
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