Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Applied Physics Letters ◽

10.1063/1.5081112 ◽

2019 ◽

Vol 114 (9) ◽

pp. 091107 ◽

Author(s):

Hongliang Chang ◽

Zhaolong Chen ◽

Weijiang Li ◽

Jianchang Yan ◽

Rui Hou ◽

...

Keyword(s):

Ultraviolet Light ◽

Sapphire Substrate ◽

Light Emitting Diodes ◽

Van Der Waals ◽

Patterned Sapphire Substrate ◽

Light Emitting ◽

Aln Film ◽

Ultraviolet Light Emitting Diodes

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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Journal of Visualized Experiments ◽

10.3791/60167 ◽

2020 ◽

Author(s):

Xiang Zhang ◽

Zhaolong Chen ◽

Hongliang Chang ◽

Jianchang Yan ◽

Shenyuan Yang ◽

...

Keyword(s):

Ultraviolet Light ◽

Sapphire Substrate ◽

Light Emitting Diodes ◽

Van Der Waals ◽

Patterned Sapphire Substrate ◽

Light Emitting ◽

Aln Film ◽

Ultraviolet Light Emitting Diodes

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Different scattering effect of nano-patterned sapphire substrate for TM- and TE-polarized light emitted from AlGaN-based deep ultraviolet light-emitting diodes

Optical Materials Express ◽

10.1364/ome.416605 ◽

2021 ◽

Vol 11 (3) ◽

pp. 729

Author(s):

Ji Zhang ◽

Le Chang ◽

Ziqiang Zhao ◽

Kangkai Tian ◽

Chunshuang Chu ◽

...

Keyword(s):

Ultraviolet Light ◽

Sapphire Substrate ◽

Light Emitting Diodes ◽

Polarized Light ◽

Patterned Sapphire Substrate ◽

Light Emitting ◽

Scattering Effect ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

Nanoscale Research Letters ◽

10.1186/1556-276x-9-505 ◽

2014 ◽

Vol 9 (1) ◽

pp. 505 ◽

Author(s):

Chia-Yu Lee ◽

An-Jye Tzou ◽

Bing-Cheng Lin ◽

Yu-Pin Lan ◽

Ching-Hsueh Chiu ◽

...

Keyword(s):

Ultraviolet Light ◽

Sapphire Substrate ◽

Light Emitting Diodes ◽

Efficiency Improvement ◽

Nucleation Layer ◽

Patterned Sapphire Substrate ◽

Light Emitting ◽

Reactive Plasma ◽

Ultraviolet Light Emitting Diodes

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Performance enhancement of GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate

Optical Materials Express ◽

10.1364/ome.4.001632 ◽

2014 ◽

Vol 4 (8) ◽

pp. 1632 ◽

Author(s):

B. C. Lin ◽

C. H. Chiu ◽

C. Y. Lee ◽

H. V. Han ◽

P. M. Tu ◽

...

Keyword(s):

Ultraviolet Light ◽

Sapphire Substrate ◽

Flip Chip ◽

Light Emitting Diodes ◽

Performance Enhancement ◽

Nucleation Layer ◽

Patterned Sapphire Substrate ◽

Light Emitting ◽

Ultraviolet Light Emitting Diodes

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Exfoliation of AlN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes

Applied Physics Express ◽

10.7567/1882-0786/aaeede ◽

2018 ◽

Vol 12 (1) ◽

pp. 015505 ◽

Author(s):

Qingqing Wu ◽

Yanan Guo ◽

Suresh Sundaram ◽

Jianchang Yan ◽

Liang Zhang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Two Dimensional ◽

Light Emitting ◽

Aln Film ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Graphene-induced crystal-healing of AlN film by thermal annealing for deep ultraviolet light-emitting diodes

Applied Physics Letters ◽

10.1063/5.0028094 ◽

2020 ◽

Vol 117 (18) ◽

pp. 181103

Author(s):

Hongliang Chang ◽

Bingyao Liu ◽

Dongdong Liang ◽

Yaqi Gao ◽

Jianchang Yan ◽

...

Keyword(s):

Thermal Annealing ◽

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Aln Film ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Highly Efficient InGaN-Based 383-nm Ultraviolet Light-Emitting Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown AlN Buffer

Applied Physics Express ◽

10.1143/apex.1.101101 ◽

2008 ◽

Vol 1 ◽

pp. 101101 ◽

Author(s):

Yasuo Ohba ◽

Kei Kaneko ◽

Hiroshi Katsuno ◽

Mitsuhiro Kushibe

Keyword(s):

High Temperature ◽

Ultraviolet Light ◽

Sapphire Substrate ◽

Light Emitting Diodes ◽

Light Emitting ◽

Highly Efficient ◽

Ultraviolet Light Emitting Diodes

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Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

Advanced Materials ◽

10.1002/adma.201807345 ◽

2019 ◽

Vol 31 (23) ◽

pp. 1807345 ◽

Author(s):

Zhaolong Chen ◽

Zhiqiang Liu ◽

Tongbo Wei ◽

Shenyuan Yang ◽

Zhipeng Dou ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Aln Film ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Transfer-free graphene-guided high-quality epitaxy of AlN film for deep ultraviolet light-emitting diodes

Journal of Applied Physics ◽

10.1063/5.0065328 ◽

2021 ◽

Vol 130 (19) ◽

pp. 193103

Author(s):

Hongliang Chang ◽

Jingyuan Shan ◽

Dongdong Liang ◽

Yaqi Gao ◽

Lulu Wang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

High Quality ◽

Light Emitting ◽

Aln Film ◽

Free Graphene ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Light Extraction Efficiency Analysis of Flip-Chip Ultraviolet Light-Emitting Diodes With Patterned Sapphire Substrate

IEEE Photonics Journal ◽

10.1109/jphot.2018.2847226 ◽

2018 ◽

Vol 10 (4) ◽

pp. 1-13 ◽

Author(s):

Yu Kee Ooi ◽

Jing Zhang

Keyword(s):

Ultraviolet Light ◽

Sapphire Substrate ◽

Flip Chip ◽

Extraction Efficiency ◽

Efficiency Analysis ◽

Light Extraction ◽

Light Extraction Efficiency ◽

Patterned Sapphire Substrate ◽

Light Emitting ◽

Ultraviolet Light Emitting Diodes

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