scholarly journals Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer

2014 ◽  
Vol 9 (1) ◽  
Author(s):  
Jing-Jing Dong ◽  
Hui-Ying Hao ◽  
Jie Xing ◽  
Zhen-Jun Fan ◽  
Zi-Li Zhang
Keyword(s):  
Light Emitting Diodes ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Current Spreading ◽  
Light Emitting ◽  
Zno Nanorod Array

scholarly journals Color tunable light-emitting diodes based on p+-Si/p-CuAlO2/n-ZnO nanorod array heterojunctions

2010 ◽  
Vol 97 (1) ◽  
pp. 013101 ◽  
Author(s):  
Bo Ling ◽  
Jun Liang Zhao ◽  
Xiao Wei Sun ◽  
Swee Tiam Tan ◽  
Aung Ko Ko Kyaw ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Light Emitting ◽  
Color Tunable ◽  
Zno Nanorod Array

scholarly journals Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hsin-Ying Lee ◽  
Yu-Chang Lin ◽  
Yu-Ting Su ◽  
Chia-Hsin Chao ◽  
Véronique Bardinal
Keyword(s):  
Blue Light ◽  
White Light ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Light Emitting ◽  
Zno Nanorod Array ◽  
White Light Emitting Diodes

The GaN-based flip-chip white light-emitting diodes (FCWLEDs) with diffused ZnO nanorod reflector and with ZnO nanorod antireflection layer were fabricated. The ZnO nanorod array grown using an aqueous solution method was combined with Al metal to form the diffused ZnO nanorod reflector. It could avoid the blue light emitted out from the Mg-doped GaN layer of the FCWLEDs, which caused more blue light emitted out from the sapphire substrate to pump the phosphor. Moreover, the ZnO nanorod array was utilized as the antireflection layer of the FCWLEDs to reduce the total reflection loss. The light output power and the phosphor conversion efficiency of the FCWLEDs with diffused nanorod reflector and 250 nm long ZnO nanorod antireflection layer were improved from 21.15 mW to 23.90 mW and from 77.6% to 80.1% in comparison with the FCWLEDs with diffused nanorod reflector and without ZnO nanorod antireflection layer, respectively.

scholarly journals Effects of GaxZn1−xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49613-49617 ◽  
Author(s):  
Rui Li ◽  
Chunyan Yu ◽  
Hailiang Dong ◽  
Wei Jia ◽  
Tianbao Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrothermal Method ◽  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Light Emitting ◽  
Photoelectric Properties ◽  
Doped Zno ◽  
Zno Nanorod Array

A Ga-doped ZnO nanorod array has been synthesized on a p-GaN/Al2O3 substrate by a hydrothermal method at low temperature.

Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes

2012 ◽  
Vol 100 (17) ◽  
pp. 171109 ◽  
Author(s):  
J. J. Dong ◽  
X. W. Zhang ◽  
Z. G. Yin ◽  
J. X. Wang ◽  
S. G. Zhang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Light Emitting ◽  
Zno Nanorod Array
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