Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

Nanoscale Research Letters ◽

10.1186/s11671-015-0739-0 ◽

2015 ◽

Vol 10 (1) ◽

Author(s):

Wen-Tsung Huang ◽

Yiming Li

Keyword(s):

Electrical Characteristic ◽

Characteristic Fluctuation ◽

Random Discrete Dopants

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Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

nano Online ◽

10.1515/nano.11671_2015.93 ◽

2016 ◽

Author(s):

Wen-Tsung Huang ◽

Yiming Li

Keyword(s):

Electrical Characteristic ◽

Characteristic Fluctuation ◽

Random Discrete Dopants

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Asymmetric characteristic fluctuation of undoped gate-all-around nanowire MOSFETs induced by random discrete dopants inside source/drain extensions

2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) ◽

10.1109/nano.2017.8117428 ◽

2017 ◽

Author(s):

Wen-Li Sung ◽

Yiming Li

Keyword(s):

Nanowire Mosfets ◽

Characteristic Fluctuation ◽

Random Discrete Dopants

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3D simulation of electrical characteristic fluctuation induced by interface traps at Si/high-к oxide interface and random dopants in 16-nm-Gate CMOS devices

69th Device Research Conference ◽

10.1109/drc.2011.5994435 ◽

2011 ◽

Author(s):

Hui-Wen Cheng ◽

Yung-Yueh Chiu ◽

Yiming Li

Keyword(s):

Electrical Characteristic ◽

3D Simulation ◽

Interface Traps ◽

Oxide Interface ◽

Random Dopants ◽

Characteristic Fluctuation

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Nanosized metal grains induced electrical characteristic fluctuation in 16-nm-gate high-κ/metal gate bulk FinFET devices

Microelectronic Engineering ◽

10.1016/j.mee.2011.03.037 ◽

2011 ◽

Vol 88 (7) ◽

pp. 1240-1242 ◽

Author(s):

Yiming Li ◽

Hui-Wen Cheng ◽

Chun-Yen Yiu ◽

Hsin-Wen Su

Keyword(s):

Electrical Characteristic ◽

Characteristic Fluctuation

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Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

Nanoscale Research Letters ◽

10.1186/1556-276x-9-633 ◽

2014 ◽

Vol 9 (1) ◽

Author(s):

Sheng-Chia Hsu ◽

Yiming Li

Keyword(s):

Electrical Characteristic ◽

Interface Traps ◽

Random Interface ◽

Characteristic Fluctuation

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Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-$\kappa$/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dc08 ◽

2012 ◽

Vol 51 ◽

pp. 04DC08

Author(s):

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Metal Oxide ◽

Electrical Characteristic ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Inverter Circuit ◽

Characteristic Fluctuation

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Electrical characteristic fluctuation of 16 nm MOSFETs induced by random dopants and interface traps

2011 IEEE International Conference on IC Design & Technology ◽

10.1109/icicdt.2011.5783187 ◽

2011 ◽

Author(s):

Hui-Wen Cheng ◽

Yung-Yueh Chiu ◽

Yiming Li

Keyword(s):

Electrical Characteristic ◽

Interface Traps ◽

Random Dopants ◽

Characteristic Fluctuation

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Simulation of electrical characteristic fluctuation in 16-nm FinFETs' and circuits

2009 Device Research Conference ◽

10.1109/drc.2009.5354879 ◽

2009 ◽

Author(s):

Yiming Li ◽

Chih-Hong Hwang ◽

Tien-Yeh Li ◽

Ming-Hung Han

Keyword(s):

Electrical Characteristic ◽

Characteristic Fluctuation

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Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-κ/metal gate MOSFETs in the presence of random discrete dopants and random interface traps

Solid-State Electronics ◽

10.1016/j.sse.2012.05.017 ◽

2012 ◽

Vol 77 ◽

pp. 12-19 ◽

Author(s):

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Electrical Characteristic ◽

Device Simulation ◽

Interface Traps ◽

Random Interface ◽

Random Discrete Dopants

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Nanosized metal grains induced electrical characteristic fluctuation in 16 nm bulk and SOI FinFET devices with TiN/HfO2 gate stack

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035025 ◽

2011 ◽

Author(s):

Hui-Wen Cheng ◽

Yiming Li ◽

Chun-Yen Yiu ◽

Hsin-Wen Su

Keyword(s):

Electrical Characteristic ◽

Characteristic Fluctuation

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