Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-κ/metal gate MOSFETs in the presence of random discrete dopants and random interface traps

Solid-State Electronics ◽

10.1016/j.sse.2012.05.017 ◽

2012 ◽

Vol 77 ◽

pp. 12-19 ◽

Author(s):

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Electrical Characteristic ◽

Device Simulation ◽

Interface Traps ◽

Random Interface ◽

Random Discrete Dopants

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Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

Nanoscale Research Letters ◽

10.1186/1556-276x-9-633 ◽

2014 ◽

Vol 9 (1) ◽

Author(s):

Sheng-Chia Hsu ◽

Yiming Li

Keyword(s):

Electrical Characteristic ◽

Interface Traps ◽

Random Interface ◽

Characteristic Fluctuation

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Impact of Random Interface Traps and Random Dopants in High-$k$ /Metal Gate Junctionless FETs

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2014.2312482 ◽

2014 ◽

Vol 13 (3) ◽

pp. 584-588 ◽

Author(s):

Yijiao Wang ◽

Peng Huang ◽

Kangliang Wei ◽

Lang Zeng ◽

Xiaoyan Liu ◽

...

Keyword(s):

Interface Traps ◽

Random Interface ◽

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Random interface-traps-induced characteristic fluctuation in 16-nm high-к/metal gate CMOS device and SRAM circuit

2011 11th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2011.6144566 ◽

2011 ◽

Author(s):

Hui-Wen Chen ◽

Yung-Yueh Chiu ◽

Yiming Li

Keyword(s):

Interface Traps ◽

Random Interface ◽

Characteristic Fluctuation

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Random Interface-Traps-Induced Characteristic Fluctuation in 16-nm High-k/Metal Gate CMOS Device and Digital Circuit

10.7567/ssdm.2011.p-3-22l ◽

2011 ◽

Author(s):

Y. Y. Chiu ◽

Y. Li ◽

H. W. Cheng

Keyword(s):

Digital Circuit ◽

Interface Traps ◽

Random Interface ◽

High K ◽

Characteristic Fluctuation

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Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-$\kappa$/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dc08 ◽

2012 ◽

Vol 51 ◽

pp. 04DC08

Author(s):

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Metal Oxide ◽

Electrical Characteristic ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Inverter Circuit ◽

Characteristic Fluctuation

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Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-κ/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dc08 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DC08 ◽

Author(s):

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Metal Oxide ◽

Electrical Characteristic ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Inverter Circuit ◽

Characteristic Fluctuation

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Analysis of USJ Formation with Combined RTA/Laser Annealing Conditions for 28nm High-K/Metal Gate CMOS Technology Using Advanced TCAD for Process and Device Simulation

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222439 ◽

2012 ◽

Author(s):

E. M. Bazizi ◽

S. M. Pandey ◽

C. Wang ◽

I. Jiang ◽

S. Chu ◽

...

Keyword(s):

Laser Annealing ◽

Device Simulation ◽

Cmos Technology ◽

Annealing Conditions ◽

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Performance Prediction of Stacked Nanowire Transistors in the Presence of Random Discrete Dopants and Metal Gate Granularity

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783687 ◽

2019 ◽

Author(s):

S. Dey ◽

E. Mohapatra ◽

J. Jena ◽

S. Das ◽

T. P. Dash ◽

...

Keyword(s):

Performance Prediction ◽

Nanowire Transistors ◽

Random Discrete Dopants

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Evaluation of trap states at front and back oxide interfaces and grain boundaries using electrical characteristic analysis and device simulation of polycrystalline silicon thin-film transistors

Electronics and Communications in Japan (Part II Electronics) ◽

10.1002/ecjb.20124 ◽

2005 ◽

Vol 88 (2) ◽

pp. 1-10 ◽

Author(s):

Mutsumi Kimura

Keyword(s):

Thin Film ◽

Grain Boundaries ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Electrical Characteristic ◽

Device Simulation ◽

Trap States ◽

Characteristic Analysis ◽

Silicon Thin Film ◽

Oxide Interfaces

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A unified 3D device simulation of random dopant, interface trap and work function fluctuations on high-к/metal gate device

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131495 ◽

2011 ◽

Author(s):

Yiming Li ◽

Hui-Wen Cheng ◽

Yung-Yueh Chiu ◽

Chun-Yen Yiu ◽

Hsin-Wen Su

Keyword(s):

Work Function ◽

Device Simulation ◽

Interface Trap ◽

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