random dopants
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Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs

2019 ◽  
Author(s):  
A. Makarov ◽  
B. Kaczer ◽  
P. Roussel ◽  
A. Chasin ◽  
M. Vandemaele ◽  
...  
Keyword(s):  
Simulation Study ◽  
Hot Carrier ◽  
Random Dopants ◽  
Random Traps ◽  
Hot Carrier Degradation

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants

2019 ◽  
Author(s):  
Alexander Makarov ◽  
Dimitri Linten ◽  
Stanislav Tyaginov ◽  
Ben Kaczer ◽  
Philippe Roussel ◽  
...  
Keyword(s):  
Stochastic Modeling ◽  
Hot Carrier ◽  
Random Dopants ◽  
The Impact ◽  
Random Traps ◽  
Hot Carrier Degradation

scholarly journals Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

2019 ◽  
Vol 40 (6) ◽  
pp. 870-873 ◽  
Author(s):  
Alexander Makarov ◽  
Ben Kaczer ◽  
Philippe Roussel ◽  
Adrian Chasin ◽  
Alexander Grill ◽  
...  
Keyword(s):  
Stochastic Modeling ◽  
Hot Carrier ◽  
Random Dopants ◽  
The Impact ◽  
Hot Carrier Degradation

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs

2019 ◽  
Author(s):  
A. Makarov ◽  
B. Kaczer ◽  
Ph. Roussel ◽  
A. Chasin ◽  
A. Grill ◽  
...  
Keyword(s):  
Hot Carrier ◽  
Random Dopants ◽  
Hot Carrier Degradation

Analysis and Modeling of Drain-Induced Barrier Lowering Variation Induced by Random Dopants in Nanometer MOSFET Channel

2017 ◽  
Vol 9 (8) ◽  
pp. 1213-1216 ◽  
Author(s):  
Wei-Feng Lü ◽  
Guang-Yi Wang ◽  
Ling-Ling Sun
Keyword(s):  
Random Dopants

Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations

2015 ◽  
Vol 32 (10) ◽  
pp. 108502 ◽  
Author(s):  
Wei-Feng Lü ◽  
Guang-Yi Wang ◽  
Mi Lin ◽  
Ling-Ling Sun
Keyword(s):  
Statistical Modeling ◽  
Gate Capacitance ◽  
Random Dopants

Impact of Random Interface Traps and Random Dopants in High-$k$ /Metal Gate Junctionless FETs

2014 ◽  
Vol 13 (3) ◽  
pp. 584-588 ◽  
Author(s):  
Yijiao Wang ◽  
Peng Huang ◽  
Kangliang Wei ◽  
Lang Zeng ◽  
Xiaoyan Liu ◽  
...  
Keyword(s):  
Interface Traps ◽  
Metal Gate ◽  
Random Interface ◽  
Random Dopants

Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants

2012 ◽  
Vol 52 (12) ◽  
pp. 2955-2961 ◽  
Author(s):  
G. Wirth ◽  
D. Vasileska ◽  
N. Ashraf ◽  
L. Brusamarello ◽  
R. Della Giustina ◽  
...  
Keyword(s):  
Modeling And Simulation ◽  
Compact Modeling ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Stationary Conditions ◽  
Random Dopants
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