Lateral twins in the sphalerite structure

Author(s):  
Ken Durose ◽  
Graham J Russell
Keyword(s):  
Author(s):  
N.-H. Cho ◽  
S. McKernan ◽  
C.B. Carter ◽  
K. Wagner

Interest has recently increased in the possibility of growing III-V compounds epitactically on non-polar substrates to produce device quality material. Antiphase boundaries (APBs) may then develop in the GaAs epilayer because it has sphalerite structure (face-centered cubic with a two-atom basis). This planar defect may then influence the electrical behavior of the GaAs epilayer. The orientation of APBs and their propagation into GaAs epilayers have been investigated experimentally using both flat-on and cross-section transmission electron microscope techniques. APBs parallel to (110) plane have been viewed at the atomic resolution and compared to simulated images.Antiphase boundaries were observed in GaAs epilayers grown on (001) Ge substrates. In the image shown in Fig.1, which was obtained from a flat-on sample, the (110) APB planes can be seen end-on; the faceted APB is visible because of the stacking fault-like fringes arising from a lattice translation at this interface.


2000 ◽  
Vol 17 (12) ◽  
pp. 899-901 ◽  
Author(s):  
Zhou Guang-Hui ◽  
Xia Qing-Lin ◽  
Pan Liu-Xian ◽  
Yan Jia-Ren

1975 ◽  
Vol 18 (5) ◽  
pp. 738-739
Author(s):  
V. I. Bogdanov ◽  
V. T. Bublik ◽  
Yu. Kh. Vekilov ◽  
I. S. Smirnov

1972 ◽  
Vol 50 (11) ◽  
pp. 1220-1221 ◽  
Author(s):  
M. D. Aggarwal ◽  
V. Raju ◽  
J. K. D. Verma

The characteristic temperatures of III–V sphalerite semiconductors have been calculated by using the Reeber–McLachlan relation. These values do not follow the same trend as obtained for II–VI solids. However, the agreement with the Debye characteristic temperature is fair.


2009 ◽  
Vol 79-82 ◽  
pp. 589-592 ◽  
Author(s):  
Hua Qu ◽  
Li Xin Cao ◽  
Ge Su ◽  
Wei Liu ◽  
Yuan Guang Sun ◽  
...  

ZnS:Ag (Ag+-doped ZnS) nanoparticles have been synthesized through the hydrothermal route, and the effects of the molar ratio of S/Zn in reagents have been studied. The products are all cubic sphalerite structure, and the crystallinity is generally increased as this ratio rises. The ratio less than 1 leads to small particles less than 10 nm, and the ratio more than 1 leads to large particles between 20~30 nm. Luminescence properties of samples show significant dependence on the ratio. The sample synthesized using stoichiometric reagents during hydrothermal preparation exhibits the strongest blue emission in this series. There is significant defect luminescence in samples synthesized using nonstoichiometric reagents and the Ag-related luminescence is quenched in them.


Author(s):  
Angel Vegas ◽  
H. Donald Brooke Jenkins

The borate Ag16B4O10 was synthesized at high temperature and at elevated oxygen pressures [Kovalevskiy et al. (2020). Chem. Sci. 11, 962–969]. Its structure consists of [B4O10]8− polyanions (isostructural to P4O10) embedded in an Ag matrix. According to the standard valences Ag+, B3+ and O2−, the formula has an excess of eight e− which the above authors proposed were located, pairwise, in four Ag4 tetrahedra within the silver substructure. That conclusion was based on the semiconducting and diamagnetic properties, as well as the very small `attractors' of the Electron Localization Function (ELF) found at the centre of these Ag4 tetrahedra. However, a large overlap of the projected density of states (DOS) of silver and oxygen indicated possible dispersion interactions between both atomic species. In this article, an alternative description is proposed based on the extended Zintl–Klemm concept. The anion [B4O10]8− can be formulated as Ψ-[N4O10] P4O10, if it is assumed that the eight e− are transferred to the four B atoms, so converting them into Ψ-N, this then makes sense of its similarity with P4O10, [N4(CH2)6], adamantane and tetraisopropyladamantane. When the Ag atoms connect to the O atoms, they arrange as the H atoms do in hexamethylenetetramine (HMTA). If the two lone pairs of each of the bridging O atoms in Ψ-[N4O10] are equated to the C—H bonds in HMTA, then, this same equivalence exists between the C—H bonds and the O—Ag bonds in the compound Ag16B4O10. The 24 Ag atoms surrounding each [B4O10]8− group prolong the sphalerite structure of the borate anion by means of Ag—O bonds which also fit the sphalerite structure formed of AgO. The eight excess electrons might then be distributed between the Ag and the O atoms, so making sense of the mixing of the Ag and O states. The Ag atoms bonded to the O atoms of the [B4O10]8− groups form a coat that interconnects the borate anions through Ag—O bonds. To establish the validity of this new proposal, the study needs to be extended to the compound Ag3B5O9.


2013 ◽  
Vol 591 ◽  
pp. 297-300
Author(s):  
Huan Ke ◽  
Shu Wang Duo ◽  
Ting Zhi Liu ◽  
Hao Zhang ◽  
Xiao Yan Fei

ZnS films have been deposited on glass substrates by chemical bath deposition (CBD). The optical and structural properties were analyzed by UV-VIS spectrophotometer and X-ray diffraction (XRD). The results showed that the prepared thin films from the solution using N2H4 as second complexing agent were thicker than those from the solution without adding N2H4 in; this is due to using second complexing agent of N2H4, the deposition mechanisms change which is conductive to heterogeneous deposition. When using N2H4 as second complexing agent, the crystallinity of ZnS thin films improved with a significant peak at 2θ=28.96°which can be assigned to the (111) reflection of the sphalerite structure. The transmittances of the prepared films from the solution adding N2H4 in as second complexing agent were over 85%, compared to those from the solution without N2H4 (over 95%). The band gaps of the ZnS films from the solution using N2H4 as second complexing agent were larger (about 4.0eV) than that from those from the solution without N2H4 (about 3.98eV), which indicated that the prepared ZnS films from the solution adding N2H4 in as second complexing agent were better used as buffer layer of solar cells with adequate optical properties. In short, using N2H4 as second complexing agent, can greatly improve the optical and structural properties of the ZnS thin films.


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