Heavy Doping Effects in Silicon

Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices ◽

10.1201/9781003208860-2 ◽

2021 ◽

pp. 3-33

Author(s):

P. Van Mieghem ◽

R.P. Mertens

Keyword(s):

Doping Effects ◽

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Heavy doping effects on open circuit voltage decay in an abrupt p+-n junction

Solid-State Electronics ◽

10.1016/0038-1101(94)90228-3 ◽

1994 ◽

Vol 37 (10) ◽

pp. 1775-1777

Author(s):

S.S. De ◽

A.K. Ghosh ◽

A.K. Hajra ◽

M. Bera ◽

J.C. Haldar

Keyword(s):

Open Circuit Voltage ◽

Open Circuit ◽

Voltage Decay ◽

Doping Effects ◽

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Heavy Doping Effects

SiGe Heterojunction Bipolar Transistors ◽

10.1002/047009074x.ch3 ◽

2004 ◽

pp. 27-43 ◽

Keyword(s):

Doping Effects ◽

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Heavy Doping Effects on the Energy Band Structure of n-Type Crystals

physica status solidi (b) ◽

10.1002/pssb.2221130242 ◽

1982 ◽

Vol 113 (2) ◽

pp. 757-778 ◽

Author(s):

H. van Cong ◽

S. Charar ◽

S. Brunet ◽

M. Averous ◽

J. L. Birman

Keyword(s):

Band Structure ◽

Energy Band ◽

Energy Band Structure ◽

Doping Effects ◽

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Heavy doping effects in the diffusion of group IV and V impurities in silicon

Journal of Applied Physics ◽

10.1063/1.353324 ◽

1993 ◽

Vol 73 (2) ◽

pp. 691-698 ◽

Author(s):

A. Nylandsted Larsen ◽

K. Kyllesbech Larsen ◽

P. E. Andersen ◽

B. G. Svensson

Keyword(s):

Group Iv ◽

Doping Effects ◽

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Two-Dimensional Numerical Simulation for GaAs MESFET with Heavy Doping Effects

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664570 ◽

2005 ◽

Author(s):

Kow-Ming Chang ◽

Gwo-Liang Lin

Keyword(s):

Numerical Simulation ◽

Two Dimensional ◽

Gaas Mesfet ◽

Doping Effects ◽

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Photoluminescence and heavy doping effects in InP

Bulletin of Materials Science ◽

10.1007/bf02744860 ◽

1990 ◽

Vol 13 (1-2) ◽

pp. 75-82

Author(s):

Seishu Bendapudi ◽

D N Bose

Keyword(s):

Doping Effects ◽

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On heavy doping effects and the injection efficiency of silicon transistors

Solid-State Electronics ◽

10.1016/0038-1101(74)90030-6 ◽

1974 ◽

Vol 17 (8) ◽

pp. 819-824 ◽

Author(s):

M.S. Mock

Keyword(s):

Injection Efficiency ◽

Doping Effects ◽

Silicon Transistors ◽

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gallium arsenide (GaAs), heavy doping effects

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_94 ◽

2005 ◽

pp. 1-6

Author(s):

Keyword(s):

Gallium Arsenide ◽

Doping Effects ◽

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Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT's

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.1900 ◽

1990 ◽

Vol 29 (Part 1, No. 10) ◽

pp. 1900-1907 ◽

Author(s):

Koki Saito ◽

Makoto Konagai ◽

Kiyoshi Takahashi

Keyword(s):

Theoretical Analysis ◽

Doping Effects ◽

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Studies on carrier lifetime in heavily doped InGaAsP

Canadian Journal of Physics ◽

10.1139/p93-089 ◽

1993 ◽

Vol 71 (11-12) ◽

pp. 582-585

Author(s):

S. S. De ◽

A. K. Ghosh ◽

M. Bera ◽

A. K. Hazra ◽

J. C. Haldar

Keyword(s):

Numerical Analysis ◽

Band Structure ◽

Quantum Efficiency ◽

Current Density ◽

Carrier Lifetime ◽

Bandgap Narrowing ◽

Doping Effects ◽

Heavily Doped ◽

A model is developed to study the carrier lifetime and quantum efficiency in heavily doped InGaAsP. In the analysis, bandgap narrowing, carrier degeneracy, and nonparabolicity of the band structure are considered as heavy doping effects. The variations of carrier lifetime and quantum efficiency with nominal current density at a given temperature are studied through numerical analysis.

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