Polymer light-emitting diode with resistivity optimized p-type Si anode

Author(s):  
Qiaoli Niu ◽  
Hengsheng Wu ◽  
Yongtao Gu ◽  
Yanzhao Li ◽  
Wenjin Zeng ◽  
...  
2013 ◽  
Vol 103 (7) ◽  
pp. 073305 ◽  
Author(s):  
Xiao-Chen Jiang ◽  
Yan-Qing Li ◽  
Yan-Hong Deng ◽  
Qi-Qi Zhuo ◽  
Shuit-Tong Lee ◽  
...  

2013 ◽  
Vol 211 (3) ◽  
pp. 651-655 ◽  
Author(s):  
Jorge Oliva ◽  
Elder De la Rosa ◽  
Luis Diaz-Torres ◽  
Anvar Zakhidov

2006 ◽  
Vol 21 (3) ◽  
pp. 285-289 ◽  
Author(s):  
Dipti Gupta ◽  
Sanjeev Singh ◽  
Monica Katiyar ◽  
Deepak ◽  
Tanima Hazra ◽  
...  

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.


2018 ◽  
Vol 204 ◽  
pp. 30-35 ◽  
Author(s):  
Baoning Li ◽  
Guorui Fu ◽  
Jiaqing Guan ◽  
Yani He ◽  
Lin Liu ◽  
...  

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