Ensemble Monte Carlo Device Modeling: High-Field Transport in Nitrides

2010 ◽  
pp. 179-206
1993 ◽  
Vol 185 (1-4) ◽  
pp. 466-470 ◽  
Author(s):  
K. Tsukioka ◽  
D. Vasileska ◽  
D.K. Ferry

2007 ◽  
Vol 21 (04) ◽  
pp. 199-206 ◽  
Author(s):  
H. ARABSHAHI

An ensemble Monte Carlo simulation has been used to model bulk electron transport at 300 K for both the natural wurtzite and the zincblende lattice phases of GaN . Electronic states within the conduction band are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone, but for zincblende GaN , the simpler spherical parabolic band approximation has also been tested, for comparison. In the case of wurtzite GaN , transport has been modeled with an electric field applied both parallel and perpendicular to the (0001) c-axis. The steady state velocity-field characteristics are in fair agreement with other recent calculations.


2021 ◽  
Vol 103 (1) ◽  
Author(s):  
Armin Bergermann ◽  
Martin French ◽  
Manuel Schöttler ◽  
Ronald Redmer

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