COMPARISON OF HIGH FIELD ELECTRON TRANSPORT PROPERTIES IN WURTZITE AND ZINCBLENDE PHASE GaN AT ROOM TEMPERATURE

2007 ◽  
Vol 21 (04) ◽  
pp. 199-206 ◽  
Author(s):  
H. ARABSHAHI
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Electronic States ◽  
Ensemble Monte Carlo ◽  
Ensemble Monte Carlo Simulation ◽  
Electron Transport Properties

An ensemble Monte Carlo simulation has been used to model bulk electron transport at 300 K for both the natural wurtzite and the zincblende lattice phases of GaN . Electronic states within the conduction band are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone, but for zincblende GaN , the simpler spherical parabolic band approximation has also been tested, for comparison. In the case of wurtzite GaN , transport has been modeled with an electric field applied both parallel and perpendicular to the (0001) c-axis. The steady state velocity-field characteristics are in fair agreement with other recent calculations.

MONTE CARLO SIMULATION OF STEADY-STATE TRANSPORT IN SUBMICROMETER InP AND GaAsn+–i(n)–n+ DIODE

2010 ◽  
Vol 24 (06) ◽  
pp. 549-560 ◽  
Author(s):  
H. ARABSHAHI ◽  
M. REZAEE ROKN-ABADI ◽  
F. BADIEIAN BAGHSIAHI ◽  
M. R. KHALVATI
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Anode Voltage ◽  
Electronic States ◽  
Electron Velocity ◽  
Back Scattering ◽  
Simulation Results ◽  
Average Electron

Monte Carlo simulation of electron transport in an InP diode of n+–i(n)–n+ structure is compared with GaAs diode. The anode voltage ranges from 0.5 to 1.5 V. The distributions of electron energies and electron velocities and the profiles of the electron density, electric field and potential and average electron velocity are computed. Based on these data, the near ballistic nature of the electron transport in the 0.2 μm-long diode and the importance of the back-scattering of electrons from the anode n+-layer are discussed. In addition, the effects of the lattice temperature and doping on the length of the active layer are discussed. Electronic states within the conduction band valleys at the Γ, L, and X are represented by non-parabolic ellipsoidal valleys centered on important symmetry points of the Brillouin zone. Our simulation results have also shown that the electron velocity characteristics in InP diode are more sensitive to temperature than in other III–V semiconductors such as GaAs .

Review of electron transport properties in bulk InGaAs and InAs at room temperature

2016 ◽  
Vol 55 (4) ◽  
Author(s):  
Slyman Karishy ◽  
Pierre Ziadé ◽  
Giulio Sabatini ◽  
Hugues Marinchio ◽  
Christophe Palermo ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Kinetic Parameters ◽  
Room Temperature ◽  
Monte Carlo Calculation ◽  
Numerical Models ◽  
Theoretical Calculations ◽  
Differential Mobility ◽  
Electron Transport Properties

A Monte Carlo simulation of electron transport in In0.53Ga0.47As and InAs is performed in order to extract the main kinetic parameters: mean valley population, effective mass, drift velocity, mean energy, ohmic and differential mobility. Most of these quantities are crucial for the development of macroscopic numerical models. Moreover, for some calculated quantities, analytical interpolation equations are given in order to achieve easy implementation in numerical codes. A comparison between our Monte Carlo calculation and several experimental and theoretical calculations is also carried out in order to validate the results.

Gibbs-ensemble Monte Carlo simulation of H2−He mixtures

2021 ◽  
Vol 103 (1) ◽  
Author(s):  
Armin Bergermann ◽  
Martin French ◽  
Manuel Schöttler ◽  
Ronald Redmer
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Gibbs Ensemble ◽  
Ensemble Monte Carlo ◽  
Ensemble Monte Carlo Simulation ◽  
Gibbs Ensemble Monte Carlo

Gibbs-ensemble Monte Carlo simulation of H2–H2O mixtures

2021 ◽  
Author(s):  
Armin Bergermann ◽  
Martin French ◽  
Ronald Redmer
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Giant Planets ◽  
Gibbs Ensemble ◽  
Miscibility Gap ◽  
Ensemble Monte Carlo ◽  
Ensemble Monte Carlo Simulation ◽  
Gibbs Ensemble Monte Carlo

The miscibility gap in H2–H2O mixtures is investigated by conducting Gibbs-ensemble Monte Carlo simulations. Our results indicate that H2–H2O immiscibility regions may have a significant impact on the structure and evolution of ice giant planets.

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