Active pressure determination under the condition of rapid determination of gas pressure

Author(s):  
Shu Yang ◽  
Genyin Cheng ◽  
Liming Qi
2017 ◽  
Vol 45 ◽  
pp. 502-510 ◽  
Author(s):  
Chaojie Wang ◽  
Shengqiang Yang ◽  
Chenglin Jiang ◽  
Dingding Yang ◽  
Chaojie Zhang ◽  
...  

Author(s):  
T. Y. Tan ◽  
W. K. Tice

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.


2017 ◽  
Vol 45 (2) ◽  
pp. 455-464
Author(s):  
T.T. Xue ◽  
J. Liu ◽  
Y.B. Shen ◽  
G.Q. Liu

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